Abstract
Microelectronic devices and components are essentialy dielectric-based monolithic structures with some additional metallization parts. These integrated circuits are highly susceptible to damage by electrostatic discharges due to electrical transients. The time-dependent degradation performance of damaged components is quantified via static-induced electrothermal effects in the device structure. The aging of the device is specified in terms of four possible damaging influences, namely, elevated temperature, high electric field, elecromigration, and undue thermoelastic stresses. Based on the relative severity of these influences, a lethality endurance factor (LEF) is defined to estimate the failure time. Enhancement of severity due to pulsed waveform is also discussed. Lastly, the latent failure is characterized as the belated response to slow endochronic growth of microfractures (creep) caused by thermoelastic stresses arising from repetitive discharges.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the Electrical/Electronics Insulation Conference |
| Publisher | IEEE Computer Society |
| Pages | 350-354 |
| Number of pages | 5 |
| State | Published - 1985 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Building and Construction