Nonequilibrium phonons and carrier cooling in polar semiconductors

Walter Pötz, M Cristina Marchetti

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We present a theoretical study of optical phonon build-up associated with the ultrafast cooling of highly photo-excited electron-hole plasmas in polar semiconductors. Confining ourselves to the study of high carrier concentrations and subpicosecond laser excitation of bulk GaAs and GaAlAs-GaAs single quantum well structures, we find that rather long optical phonon lifetimes are primarily responsible for the experimental observation of reduced carrier cooling rates. The importance of the carrier-carrier interaction, screening, carrier confinement, and slab modes is discussed.

Original languageEnglish (US)
Pages (from-to)100-106
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume942
DOIs
StatePublished - Aug 22 1988

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

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