Nonequilibrium phonons and carrier cooling in polar semiconductors

Walter Pötz; M. Cristina Marchetti

doi:10.1117/12.947200

Nonequilibrium phonons and carrier cooling in polar semiconductors

Walter Pötz, M. Cristina Marchetti

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We present a theoretical study of optical phonon build-up associated with the ultrafast cooling of highly photo-excited electron-hole plasmas in polar semiconductors. Confining ourselves to the study of high carrier concentrations and subpicosecond laser excitation of bulk GaAs and GaAlAs-GaAs single quantum well structures, we find that rather long optical phonon lifetimes are primarily responsible for the experimental observation of reduced carrier cooling rates. The importance of the carrier-carrier interaction, screening, carrier confinement, and slab modes is discussed.

Original language	English (US)
Pages (from-to)	100-106
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	942
DOIs	https://doi.org/10.1117/12.947200
State	Published - Aug 22 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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AB - We present a theoretical study of optical phonon build-up associated with the ultrafast cooling of highly photo-excited electron-hole plasmas in polar semiconductors. Confining ourselves to the study of high carrier concentrations and subpicosecond laser excitation of bulk GaAs and GaAlAs-GaAs single quantum well structures, we find that rather long optical phonon lifetimes are primarily responsible for the experimental observation of reduced carrier cooling rates. The importance of the carrier-carrier interaction, screening, carrier confinement, and slab modes is discussed.

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Nonequilibrium phonons and carrier cooling in polar semiconductors

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