MULTIPLE-TRAPPING MODEL WITH OPTICAL BIAS.

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Abstract

The transient response of an illuminated ('optically biased') semiconductor to a small photoexcitation impulse is calculated by linearizing the multiple-trapping model. Both the photocurrent and photo-induced absorption responses are treated, including the effects of finite trap occupancy and of monomolecular or bimolecular recombination processes. Specific solutions are presented for exponentially distributed traps, and a simple classification of these transient responses based on a thermalization criterion is advanced. The numerical and analytical solution procedures used are, in principle, exact and may be used to calculate the transient response for arbitrary trap distributions. These solutions are compared with the approximate solutions obtained using the time-dependent demarcation-energy technique. Procedures for using the results to obtain the model parameters from experimental transient-response measurements are given.

Original languageEnglish (US)
Pages (from-to)1075-1095
Number of pages21
JournalPhilosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
Volume52
Issue number6
StatePublished - Dec 1985

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Transient analysis
Photoexcitation
Photocurrents
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

MULTIPLE-TRAPPING MODEL WITH OPTICAL BIAS. / Pandya, R.; Schiff, Eric Allan.

In: Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, Vol. 52, No. 6, 12.1985, p. 1075-1095.

Research output: Contribution to journalArticle

@article{57a9a369dec54f099818f23a6c0e1489,
title = "MULTIPLE-TRAPPING MODEL WITH OPTICAL BIAS.",
abstract = "The transient response of an illuminated ('optically biased') semiconductor to a small photoexcitation impulse is calculated by linearizing the multiple-trapping model. Both the photocurrent and photo-induced absorption responses are treated, including the effects of finite trap occupancy and of monomolecular or bimolecular recombination processes. Specific solutions are presented for exponentially distributed traps, and a simple classification of these transient responses based on a thermalization criterion is advanced. The numerical and analytical solution procedures used are, in principle, exact and may be used to calculate the transient response for arbitrary trap distributions. These solutions are compared with the approximate solutions obtained using the time-dependent demarcation-energy technique. Procedures for using the results to obtain the model parameters from experimental transient-response measurements are given.",
author = "R. Pandya and Schiff, {Eric Allan}",
year = "1985",
month = "12",
language = "English (US)",
volume = "52",
pages = "1075--1095",
journal = "Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties",
issn = "0141-8637",
publisher = "Taylor and Francis Ltd.",
number = "6",

}

TY - JOUR

T1 - MULTIPLE-TRAPPING MODEL WITH OPTICAL BIAS.

AU - Pandya, R.

AU - Schiff, Eric Allan

PY - 1985/12

Y1 - 1985/12

N2 - The transient response of an illuminated ('optically biased') semiconductor to a small photoexcitation impulse is calculated by linearizing the multiple-trapping model. Both the photocurrent and photo-induced absorption responses are treated, including the effects of finite trap occupancy and of monomolecular or bimolecular recombination processes. Specific solutions are presented for exponentially distributed traps, and a simple classification of these transient responses based on a thermalization criterion is advanced. The numerical and analytical solution procedures used are, in principle, exact and may be used to calculate the transient response for arbitrary trap distributions. These solutions are compared with the approximate solutions obtained using the time-dependent demarcation-energy technique. Procedures for using the results to obtain the model parameters from experimental transient-response measurements are given.

AB - The transient response of an illuminated ('optically biased') semiconductor to a small photoexcitation impulse is calculated by linearizing the multiple-trapping model. Both the photocurrent and photo-induced absorption responses are treated, including the effects of finite trap occupancy and of monomolecular or bimolecular recombination processes. Specific solutions are presented for exponentially distributed traps, and a simple classification of these transient responses based on a thermalization criterion is advanced. The numerical and analytical solution procedures used are, in principle, exact and may be used to calculate the transient response for arbitrary trap distributions. These solutions are compared with the approximate solutions obtained using the time-dependent demarcation-energy technique. Procedures for using the results to obtain the model parameters from experimental transient-response measurements are given.

UR - http://www.scopus.com/inward/record.url?scp=0022244380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022244380&partnerID=8YFLogxK

M3 - Article

VL - 52

SP - 1075

EP - 1095

JO - Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties

SN - 0141-8637

IS - 6

ER -