Modulated electron-spin-resonance measurements and defect correlation energies in amorphous silicon

J. K. Lee, E. A. Schiff

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

We show that thermal modulation of the spin density is determined primarily by the defect correlation energy in intrinsic amorphous semiconductors, and is fairly insensitive to Fermi level position. We present temperature-dependent electron-spin-resonance (ESR) measurements for intrinsic hydrogenated amorphous silicon indicating a correlation energy of about 0.3 eV in low-defect-density material. We discuss the previous interpretation of depletion-width-modulated ESR in intrinsic a-Si:H as indicating a correlation energy of 0.0 eV.

Original languageEnglish (US)
Pages (from-to)2972-2975
Number of pages4
JournalPhysical Review Letters
Volume68
Issue number19
DOIs
StatePublished - Jan 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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