Modeling the Gate More Accurately for Power MOSFETs

Ronnie A. Wunderlich; Prasanta K. Ghosh

doi:10.1109/63.285500

Modeling the Gate More Accurately for Power MOSFETs

Ronnie A. Wunderlich, Prasanta K. Ghosh

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In recent years, power MOSFET devices are replacing the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generated a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device.

Original language	English (US)
Pages (from-to)	105-111
Number of pages	7
Journal	IEEE Transactions on Power Electronics
Volume	9
Issue number	1
DOIs	https://doi.org/10.1109/63.285500
State	Published - Jan 1994
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/63.285500

Cite this

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title = "Modeling the Gate More Accurately for Power MOSFETs",

abstract = "In recent years, power MOSFET devices are replacing the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generated a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device.",

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AU - Wunderlich, Ronnie A.

AU - Ghosh, Prasanta K.

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N2 - In recent years, power MOSFET devices are replacing the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generated a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device.

AB - In recent years, power MOSFET devices are replacing the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generated a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device.

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Modeling the Gate More Accurately for Power MOSFETs

Abstract

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