In recent years, power MOSFET devices are replacing the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generated a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device.
ASJC Scopus subject areas
- Electrical and Electronic Engineering