Modeling the Gate More Accurately for Power MOSFETs

Ronnie A. Wunderlich, Prasanta K. Ghosh

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In recent years, power MOSFET devices are replacing the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generated a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device.

Original languageEnglish (US)
Pages (from-to)105-111
Number of pages7
JournalIEEE Transactions on Power Electronics
Volume9
Issue number1
DOIs
StatePublished - Jan 1994

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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