Modeling of doping profile in active-silicon region of silicon-on-insulator transistor as a function of channel length

J. Mody, P. Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2005 International Semiconductor Device Research Symposium
Pages364-365
Number of pages2
StatePublished - Dec 1 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005Dec 9 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period12/7/0512/9/05

ASJC Scopus subject areas

  • Engineering(all)

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