TY - JOUR
T1 - Mitigating Open-Circuit Voltage Loss in Pb-Sn Low-Bandgap Perovskite Solar Cells via Additive Engineering
AU - Ghimire, Nabin
AU - Bobba, Raja Sekhar
AU - Gurung, Ashim
AU - Reza, Khan Mamun
AU - Laskar, Md Ashiqur Rahman
AU - Lamsal, Buddhi Sagar
AU - Emshadi, Khalid
AU - Pathak, Rajesh
AU - Afroz, Mohammad Adil
AU - Chowdhury, Ashraful Haider
AU - Chen, Ke
AU - Bahrami, Behzad
AU - Rahman, Sheikh Ifatur
AU - Pokharel, Jyotshna
AU - Baniya, Abiral
AU - Rahman, Md Tawabur
AU - Zhou, Yue
AU - Qiao, Quinn
N1 - Publisher Copyright:
©
PY - 2021/2/22
Y1 - 2021/2/22
N2 - Lead (Pb)-Tin (Sn) mixed perovskites suffer from large open-circuit voltage (Voc) loss due to the rapid crystallization of perovskite films, creating Sn and Pb vacancies. Such vacancies act as defect sites expediting charge carrier recombination, thus hampering the charge carrier dynamics and optoelectronic properties of the perovskite film. Here, we report the passivation of these defects using a controlled amount of 2-phenylethylazanium iodide (PEAI) in perovskite precursor solution as a dopant to enhance the performance of the 1.25 eV Pb-Sn low-bandgap perovskite solar cell. It was found that the incorporation of PEAI in the perovskite precursor not only improves the perovskite film quality and crystallinity but also lowers the electronic disorder, thereby enhancing the open-circuit voltage up to 0.85 V, corresponding to Voc loss as low as 0.4 V and the power conversion efficiency up to 17.33%. The value of Voc loss obtained with this strategy is among the least obtained for similar band gap Pb-Sn low-bandgap perovskite solar cells. Furthermore, the ambient and dark self-stability of the PEAI-treated devices were also enhanced. This work presents a simple doping strategy to mitigate the Voc loss of Pb-Sn mixed low-bandgap perovskite solar cells.
AB - Lead (Pb)-Tin (Sn) mixed perovskites suffer from large open-circuit voltage (Voc) loss due to the rapid crystallization of perovskite films, creating Sn and Pb vacancies. Such vacancies act as defect sites expediting charge carrier recombination, thus hampering the charge carrier dynamics and optoelectronic properties of the perovskite film. Here, we report the passivation of these defects using a controlled amount of 2-phenylethylazanium iodide (PEAI) in perovskite precursor solution as a dopant to enhance the performance of the 1.25 eV Pb-Sn low-bandgap perovskite solar cell. It was found that the incorporation of PEAI in the perovskite precursor not only improves the perovskite film quality and crystallinity but also lowers the electronic disorder, thereby enhancing the open-circuit voltage up to 0.85 V, corresponding to Voc loss as low as 0.4 V and the power conversion efficiency up to 17.33%. The value of Voc loss obtained with this strategy is among the least obtained for similar band gap Pb-Sn low-bandgap perovskite solar cells. Furthermore, the ambient and dark self-stability of the PEAI-treated devices were also enhanced. This work presents a simple doping strategy to mitigate the Voc loss of Pb-Sn mixed low-bandgap perovskite solar cells.
KW - PEAI salt
KW - Pb-Sn hybrid perovskite
KW - Vdeficit
KW - additive engineering
KW - defect passivation
KW - low-bandgap perovskite
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U2 - 10.1021/acsaem.0c02895
DO - 10.1021/acsaem.0c02895
M3 - Article
AN - SCOPUS:85100690414
SN - 2574-0962
VL - 4
SP - 1731
EP - 1742
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 2
ER -