Material for optical memory

Rebecca J. Bussjager, Joseph M. Osman, R. M. Villarica, Joseph Chaiken

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new and highly promising optical memory technology based on a proprietary metal oxide material has been developed in an on-going Rome Laboratory/Laser Chemical Corporation effort. Metal oxide materials are being evaluated for use as optical disk media and optically addressable electronic memory. Simultaneously presented Nd:YAG laser beams at 1.06 micrometer and doubled YAG at 532 nm are used to write blue bits on the metal oxide material. The 532 nm radiation causes electron transfer from oxygen to metal atoms. This weakens the metal- oxygen bonds, allowing lattice oxygen to be driven out. This additional electron then can move from one metal atom in the written spot to another. This process, called 'intervalence transfer,' involves absorption of visible light, making the material appear a different color then the unwritten material. The color change is permanent until the material is reheated to a temperature greater than 350 degrees Celsius either in an oven for global erase, or by a concentrated infrared laser beam for spot erase. Multiwavelength schemes are incorporated into optically reading the bits. Design, fabrication and evaluation of WO 3 thin films is discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages34-46
Number of pages13
Volume3075
ISBN (Print)0819424900
StatePublished - 1997
Externally publishedYes
EventPhotonic Processing Technology and Applications - Orlando, FL, USA
Duration: Apr 21 1997Apr 22 1997

Other

OtherPhotonic Processing Technology and Applications
CityOrlando, FL, USA
Period4/21/974/22/97

Fingerprint

Optical data storage
metal oxides
oxygen
Metals
laser beams
metals
color
chemical lasers
optical disks
ovens
infrared lasers
yttrium-aluminum garnet
Oxides
Oxygen
Laser beams
atoms
YAG lasers
micrometers
electron transfer
Chemical lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Bussjager, R. J., Osman, J. M., Villarica, R. M., & Chaiken, J. (1997). Material for optical memory. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3075, pp. 34-46). Society of Photo-Optical Instrumentation Engineers.

Material for optical memory. / Bussjager, Rebecca J.; Osman, Joseph M.; Villarica, R. M.; Chaiken, Joseph.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3075 Society of Photo-Optical Instrumentation Engineers, 1997. p. 34-46.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bussjager, RJ, Osman, JM, Villarica, RM & Chaiken, J 1997, Material for optical memory. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3075, Society of Photo-Optical Instrumentation Engineers, pp. 34-46, Photonic Processing Technology and Applications, Orlando, FL, USA, 4/21/97.
Bussjager RJ, Osman JM, Villarica RM, Chaiken J. Material for optical memory. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3075. Society of Photo-Optical Instrumentation Engineers. 1997. p. 34-46
Bussjager, Rebecca J. ; Osman, Joseph M. ; Villarica, R. M. ; Chaiken, Joseph. / Material for optical memory. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3075 Society of Photo-Optical Instrumentation Engineers, 1997. pp. 34-46
@inproceedings{99e790a7aa7040219d33047e1d08505b,
title = "Material for optical memory",
abstract = "A new and highly promising optical memory technology based on a proprietary metal oxide material has been developed in an on-going Rome Laboratory/Laser Chemical Corporation effort. Metal oxide materials are being evaluated for use as optical disk media and optically addressable electronic memory. Simultaneously presented Nd:YAG laser beams at 1.06 micrometer and doubled YAG at 532 nm are used to write blue bits on the metal oxide material. The 532 nm radiation causes electron transfer from oxygen to metal atoms. This weakens the metal- oxygen bonds, allowing lattice oxygen to be driven out. This additional electron then can move from one metal atom in the written spot to another. This process, called 'intervalence transfer,' involves absorption of visible light, making the material appear a different color then the unwritten material. The color change is permanent until the material is reheated to a temperature greater than 350 degrees Celsius either in an oven for global erase, or by a concentrated infrared laser beam for spot erase. Multiwavelength schemes are incorporated into optically reading the bits. Design, fabrication and evaluation of WO 3 thin films is discussed.",
author = "Bussjager, {Rebecca J.} and Osman, {Joseph M.} and Villarica, {R. M.} and Joseph Chaiken",
year = "1997",
language = "English (US)",
isbn = "0819424900",
volume = "3075",
pages = "34--46",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - GEN

T1 - Material for optical memory

AU - Bussjager, Rebecca J.

AU - Osman, Joseph M.

AU - Villarica, R. M.

AU - Chaiken, Joseph

PY - 1997

Y1 - 1997

N2 - A new and highly promising optical memory technology based on a proprietary metal oxide material has been developed in an on-going Rome Laboratory/Laser Chemical Corporation effort. Metal oxide materials are being evaluated for use as optical disk media and optically addressable electronic memory. Simultaneously presented Nd:YAG laser beams at 1.06 micrometer and doubled YAG at 532 nm are used to write blue bits on the metal oxide material. The 532 nm radiation causes electron transfer from oxygen to metal atoms. This weakens the metal- oxygen bonds, allowing lattice oxygen to be driven out. This additional electron then can move from one metal atom in the written spot to another. This process, called 'intervalence transfer,' involves absorption of visible light, making the material appear a different color then the unwritten material. The color change is permanent until the material is reheated to a temperature greater than 350 degrees Celsius either in an oven for global erase, or by a concentrated infrared laser beam for spot erase. Multiwavelength schemes are incorporated into optically reading the bits. Design, fabrication and evaluation of WO 3 thin films is discussed.

AB - A new and highly promising optical memory technology based on a proprietary metal oxide material has been developed in an on-going Rome Laboratory/Laser Chemical Corporation effort. Metal oxide materials are being evaluated for use as optical disk media and optically addressable electronic memory. Simultaneously presented Nd:YAG laser beams at 1.06 micrometer and doubled YAG at 532 nm are used to write blue bits on the metal oxide material. The 532 nm radiation causes electron transfer from oxygen to metal atoms. This weakens the metal- oxygen bonds, allowing lattice oxygen to be driven out. This additional electron then can move from one metal atom in the written spot to another. This process, called 'intervalence transfer,' involves absorption of visible light, making the material appear a different color then the unwritten material. The color change is permanent until the material is reheated to a temperature greater than 350 degrees Celsius either in an oven for global erase, or by a concentrated infrared laser beam for spot erase. Multiwavelength schemes are incorporated into optically reading the bits. Design, fabrication and evaluation of WO 3 thin films is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0031354025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031354025&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031354025

SN - 0819424900

VL - 3075

SP - 34

EP - 46

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

ER -