Low write-energy STT-MRAMs using FinFET-based access transistors

Alireza Shafaei, Yanzhi Wang, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Spin-Transfer Torque Magnetic RAM (STT-MRAM) technology requires a high current in order to write data into memory cells, which gives rise to large access transistors in conventional MOS-accessed cells. On the other hand, FinFET devices offer higher ON current and denser layout compared with planar CMOS transistors. This paper thus proposes the design of an energy-efficient STT-MRAM cell which utilizes a FinFET access transistor. To assess the performance of the new cell, optimal layout-related parameters of the FinFET access transistor and the MTJ are analytically derived in order to minimize the STT-MRAM cell area. Afterwards, detailed cell- and architecture-level comparisons between FinFET- vs. MOS-accessed STT-MRAMs are performed. According to the comparison results, while the area of the MOS-accessed STT-MRAM increases significantly under 3ns write pulse width (τw), the FinFET-based design can effectively function under τw = 2ns, at the cost of slight increase in the memory area. Hence, the FinFET-accessed STT-MRAM offers denser area and higher energy efficiency compared with the conventional MOS-accessed counterpart.

Original languageEnglish (US)
Title of host publication2014 32nd IEEE International Conference on Computer Design, ICCD 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages374-379
Number of pages6
ISBN (Electronic)9781479964925
DOIs
StatePublished - Dec 3 2014
Event32nd IEEE International Conference on Computer Design, ICCD 2014 - Seoul, Korea, Republic of
Duration: Oct 19 2014Oct 22 2014

Publication series

Name2014 32nd IEEE International Conference on Computer Design, ICCD 2014

Other

Other32nd IEEE International Conference on Computer Design, ICCD 2014
CountryKorea, Republic of
CitySeoul
Period10/19/1410/22/14

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications

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    Shafaei, A., Wang, Y., & Pedram, M. (2014). Low write-energy STT-MRAMs using FinFET-based access transistors. In 2014 32nd IEEE International Conference on Computer Design, ICCD 2014 (pp. 374-379). [6974708] (2014 32nd IEEE International Conference on Computer Design, ICCD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCD.2014.6974708