Low write-energy STT-MRAMs using FinFET-based access transistors

Alireza Shafaei, Yanzhi Wang, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Spin-Transfer Torque Magnetic RAM (STT-MRAM) technology requires a high current in order to write data into memory cells, which gives rise to large access transistors in conventional MOS-accessed cells. On the other hand, FinFET devices offer higher ON current and denser layout compared with planar CMOS transistors. This paper thus proposes the design of an energy-efficient STT-MRAM cell which utilizes a FinFET access transistor. To assess the performance of the new cell, optimal layout-related parameters of the FinFET access transistor and the MTJ are analytically derived in order to minimize the STT-MRAM cell area. Afterwards, detailed cell- and architecture-level comparisons between FinFET- vs. MOS-accessed STT-MRAMs are performed. According to the comparison results, while the area of the MOS-accessed STT-MRAM increases significantly under 3ns write pulse width (τw), the FinFET-based design can effectively function under τw = 2ns, at the cost of slight increase in the memory area. Hence, the FinFET-accessed STT-MRAM offers denser area and higher energy efficiency compared with the conventional MOS-accessed counterpart.

Original languageEnglish (US)
Title of host publication2014 32nd IEEE International Conference on Computer Design, ICCD 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages374-379
Number of pages6
ISBN (Electronic)9781479964925
DOIs
StatePublished - Dec 3 2014
Event32nd IEEE International Conference on Computer Design, ICCD 2014 - Seoul, Korea, Republic of
Duration: Oct 19 2014Oct 22 2014

Publication series

Name2014 32nd IEEE International Conference on Computer Design, ICCD 2014

Other

Other32nd IEEE International Conference on Computer Design, ICCD 2014
Country/TerritoryKorea, Republic of
CitySeoul
Period10/19/1410/22/14

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications

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