Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Mar 4 1982|
- Deep levels
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering