LOW-FREQUENCY EMISSIONS FROM DEEP LEVELS IN GaAs MESFETs.

M. B. Das, Prasanta K Ghosh

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.

Original languageEnglish (US)
Pages (from-to)207-208
Number of pages2
JournalElectronics Letters
Volume18
Issue number5
StatePublished - Mar 4 1982
Externally publishedYes

Fingerprint

Natural frequencies
Ions
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

LOW-FREQUENCY EMISSIONS FROM DEEP LEVELS IN GaAs MESFETs. / Das, M. B.; Ghosh, Prasanta K.

In: Electronics Letters, Vol. 18, No. 5, 04.03.1982, p. 207-208.

Research output: Contribution to journalArticle

@article{d64638aa9ff540feaf04f63740b91810,
title = "LOW-FREQUENCY EMISSIONS FROM DEEP LEVELS IN GaAs MESFETs.",
abstract = "Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.",
author = "Das, {M. B.} and Ghosh, {Prasanta K}",
year = "1982",
month = "3",
day = "4",
language = "English (US)",
volume = "18",
pages = "207--208",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "5",

}

TY - JOUR

T1 - LOW-FREQUENCY EMISSIONS FROM DEEP LEVELS IN GaAs MESFETs.

AU - Das, M. B.

AU - Ghosh, Prasanta K

PY - 1982/3/4

Y1 - 1982/3/4

N2 - Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.

AB - Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.

UR - http://www.scopus.com/inward/record.url?scp=0020474576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020474576&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020474576

VL - 18

SP - 207

EP - 208

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 5

ER -