Abstract
Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.
Original language | English (US) |
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Pages (from-to) | 207-208 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 18 |
Issue number | 5 |
DOIs | |
State | Published - Mar 4 1982 |
Externally published | Yes |
Keywords
- Deep levels
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering