Low-frequency emissions from deep levels in GaAs MESFETs

M. B. Das, P. K. Ghosh

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.

Original languageEnglish (US)
Pages (from-to)207-208
Number of pages2
JournalElectronics Letters
Volume18
Issue number5
DOIs
StatePublished - Mar 4 1982
Externally publishedYes

Keywords

  • Deep levels
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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