Long range interaction between a He atom and a semiconductor surface

G. Vidali; M. W. Cole

doi:10.1016/0167-2584(81)90245-0

Long range interaction between a He atom and a semiconductor surface

G. Vidali, M. W. Cole

Research output: Contribution to journal › Article › peer-review

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Abstract

The dispersion interaction between a He atom and a solid has the form V ∼ -C₃z^-3 at large distance. We calculate the value of C₃ for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈₂(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C₃ obtained from experimental data.

Original language	English (US)
Pages (from-to)	L374-L378
Journal	Surface Science Letters
Volume	107
Issue number	2-3
DOIs	https://doi.org/10.1016/0167-2584(81)90245-0
State	Published - Jun 1 1981
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

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10.1016/0167-2584(81)90245-0

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@article{ef6de054694849189e3a9f071dec90cd,

title = "Long range interaction between a He atom and a semiconductor surface",

abstract = "The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.",

author = "G. Vidali and Cole, {M. W.}",

year = "1981",

month = jun,

day = "1",

doi = "10.1016/0167-2584(81)90245-0",

language = "English (US)",

volume = "107",

pages = "L374--L378",

journal = "Surface Science Letters",

issn = "0167-2584",

publisher = "Elsevier",

number = "2-3",

}

TY - JOUR

T1 - Long range interaction between a He atom and a semiconductor surface

AU - Vidali, G.

AU - Cole, M. W.

PY - 1981/6/1

Y1 - 1981/6/1

N2 - The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

AB - The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

UR - http://www.scopus.com/inward/record.url?scp=24244439438&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24244439438&partnerID=8YFLogxK

U2 - 10.1016/0167-2584(81)90245-0

DO - 10.1016/0167-2584(81)90245-0

M3 - Article

AN - SCOPUS:24244439438

SN - 0167-2584

VL - 107

SP - L374-L378

JO - Surface Science Letters

JF - Surface Science Letters

IS - 2-3

ER -

Long range interaction between a He atom and a semiconductor surface

Abstract

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