Long range interaction between a He atom and a semiconductor surface

G. Vidali, M. W. Cole

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

Original languageEnglish (US)
Pages (from-to)L374-L378
JournalSurface Science Letters
Volume107
Issue number2-3
DOIs
StatePublished - Jun 1 1981
Externally publishedYes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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