Light-soaking effects on the open-circuit voltage of a-Si:H solar cells

Jianjun Liang, E. A. Schiff, S. Guha, B. Yan, J. Yang

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We present measurements on the decline of the open-circuit voltage V oc in a-Si:H solar cells during extended illumination (light-soaking) at 295 K. We used a near-infrared laser that was nearly uniformly absorbed in the intrinsic layer of the cell. At the highest photogeneration rate (about 2×1021 cm-3), a noticeable decline (0.01 V) occurred within about 10 minutes; Voc stabilized at 0.04 V below its initial value after about 200 hours. We found that both the kinetics and the magnitudes of Voc are reasonably consistent with the predictions of a calculation combining a bandtail+defect picture for recombination and a hydrogen-collision model for defect generation. The version of the hydrogen-collision model that we used assumes that only bandtail recombination drives the hydrogen collision processes. Within this picture, the crossover between bandtail and defect recombination occurs on the same timescale as the "light-induced annealing" process that accounts for stabilization of the optoelectronic properties for long light-soaking times.

Original languageEnglish (US)
Article numberA13.6
Pages (from-to)475-480
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume862
DOIs
StatePublished - 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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