Lifetime regime in the electrically-detected transient grating method applied to amorphous and microcrystalline silicon films

P. Sanguino, M. Niehus, S. Koynov, P. Brogueira, R. Schwarz, J. P. Conde, V. Chu, E. A. Schiff

Research output: Contribution to journalConference article


The minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HW-CVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Original languageEnglish (US)
Pages (from-to)315-320
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 1 2002
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: Apr 2 2002Apr 5 2002


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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