Leakage power reduction using the body bias and pin reordering technique

Jae Woong Chun, Chien Yi Roger Chen

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


This paper presents a new method to reduce the standby leakage power consumption using the body bias and pin reordering technique for nanometer-scale CMOS circuits. The proposed method, unlike the conventional reverse body biasing (RBB) technique, considers gate leakage to minimize the negative effects of the existing RBB approach. This minimization of the negative effects can be achieved by intelligently applying proper body bias to the appropriate CMOS network based on its status (on-/off-state) with the aid of a pin reordering technique. Experimental results on ISCAS’85 benchmark circuits show that the proposed method can achieve improvements in terms of leakage power savings that range from 16% to 38% when compared with the previous works.

Original languageEnglish (US)
Article number20151052
JournalIEICE Electronics Express
Issue number3
StatePublished - Jan 18 2016


  • Leakage current
  • Leakage power saving
  • Nanometer-scale CMOS circuits Classification: Integrated circuits
  • Pin reordering
  • Reverse/forward body bias

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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