Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Anastasiia Iefanova; Nirmal Adhikari; Ashish Dubey; Devendra Khatiwada; Qiquan Qiao

doi:10.1063/1.4961463

Lead free CH₃NH₃SnI₃ perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Anastasiia Iefanova, Nirmal Adhikari, Ashish Dubey, Devendra Khatiwada, Qiquan Qiao

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Lead free CH₃NH₃SnI₃ perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH₃NH₃SnI₃ film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH₃NH₃SnI₃ films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH₃NH₃SnI₃ can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.

Original language	English (US)
Article number	085312
Journal	AIP Advances
Volume	6
Issue number	8
DOIs	https://doi.org/10.1063/1.4961463
State	Published - Aug 1 2016
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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@article{8c5b0c39a03e42648de3f0c4e3b986d4,

title = "Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity",

abstract = "Lead free CH3NH3SnI3 perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH3NH3SnI3 film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH3NH3SnI3 films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH3NH3SnI3 can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.",

author = "Anastasiia Iefanova and Nirmal Adhikari and Ashish Dubey and Devendra Khatiwada and Qiquan Qiao",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = aug,

day = "1",

doi = "10.1063/1.4961463",

language = "English (US)",

volume = "6",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

AU - Iefanova, Anastasiia

AU - Adhikari, Nirmal

AU - Dubey, Ashish

AU - Khatiwada, Devendra

AU - Qiao, Qiquan

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Lead free CH3NH3SnI3 perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH3NH3SnI3 film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH3NH3SnI3 films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH3NH3SnI3 can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.

AB - Lead free CH3NH3SnI3 perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH3NH3SnI3 film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH3NH3SnI3 films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH3NH3SnI3 can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.

UR - http://www.scopus.com/inward/record.url?scp=84983548890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983548890&partnerID=8YFLogxK

U2 - 10.1063/1.4961463

DO - 10.1063/1.4961463

M3 - Article

AN - SCOPUS:84983548890

SN - 2158-3226

VL - 6

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 085312

ER -

Lead free CH₃NH₃SnI₃ perovskite thin-film with p-type semiconducting nature and metal-like conductivity

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