Layout characterization and power density analysis for shorted-gate and independent-Gate 7nm FinFET standard cells

Tiansong Cui; Bowen Chen; Yanzhi Wang; Shahin Nazarian; Massoud Pedram

doi:10.1145/2742060.2742093

Layout characterization and power density analysis for shorted-gate and independent-Gate 7nm FinFET standard cells

Tiansong Cui, Bowen Chen, Yanzhi Wang, Shahin Nazarian, Massoud Pedram

Research output: Chapter in Book/Entry/Poem › Conference contribution

5 Scopus citations

Abstract

In this paper, a power density analysis is presented for 7nm FinFET technology node based on both shorted-gate (SG) and independentgate (IG) standard cells operating in multiple supply voltage regimes. A Liberty-formatted standard cell library is constructed by selecting the appropriate number of fins for the pull-up and pull-down networks of each logic cell. Next, each cell is characterized by doing SPICE simulations to calculate the propagation delays and output transition times as a function of input transition times and load capacitance values. Finally, the power density of 7nm FinFET technology node is analyzed and compared with the 45 nm CMOS technology node for different circuits. Experimental result shows that the power density of each 7nm FinFET circuit is 3-20 times larger than that of 45nm CMOS circuit under the spacer-defined technology. Experimental result also shows that the back-gate signal enables a better control of power consumption for independentgate FinFETs.

Original language	English (US)
Title of host publication	GLSVLSI 2015 - 25th 2015 Great Lakes Symposium on VLSI
Publisher	Association for Computing Machinery
Pages	33-38
Number of pages	6
ISBN (Electronic)	9781450334747
DOIs	https://doi.org/10.1145/2742060.2742093
State	Published - May 20 2015
Externally published	Yes
Event	25th Great Lakes Symposium on VLSI, GLSVLSI 2015 - Pittsburgh, United States Duration: May 20 2015 → May 22 2015

Publication series

Name	Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
Volume	20-22-May-2015

Other

Other	25th Great Lakes Symposium on VLSI, GLSVLSI 2015
Country/Territory	United States
City	Pittsburgh
Period	5/20/15 → 5/22/15

Keywords

FinFET
Independent gate control
Layout
Power density

ASJC Scopus subject areas

General Engineering

Access to Document

10.1145/2742060.2742093

Cite this

Cui, T., Chen, B., Wang, Y., Nazarian, S., & Pedram, M. (2015). Layout characterization and power density analysis for shorted-gate and independent-Gate 7nm FinFET standard cells. In GLSVLSI 2015 - 25th 2015 Great Lakes Symposium on VLSI (pp. 33-38). (Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI; Vol. 20-22-May-2015). Association for Computing Machinery. https://doi.org/10.1145/2742060.2742093

Layout characterization and power density analysis for shorted-gate and independent-Gate 7nm FinFET standard cells. / Cui, Tiansong; Chen, Bowen; Wang, Yanzhi et al.
GLSVLSI 2015 - 25th 2015 Great Lakes Symposium on VLSI. Association for Computing Machinery, 2015. p. 33-38 (Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI; Vol. 20-22-May-2015).

Research output: Chapter in Book/Entry/Poem › Conference contribution

Cui, T, Chen, B, Wang, Y, Nazarian, S & Pedram, M 2015, Layout characterization and power density analysis for shorted-gate and independent-Gate 7nm FinFET standard cells. in GLSVLSI 2015 - 25th 2015 Great Lakes Symposium on VLSI. Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, vol. 20-22-May-2015, Association for Computing Machinery, pp. 33-38, 25th Great Lakes Symposium on VLSI, GLSVLSI 2015, Pittsburgh, United States, 5/20/15. https://doi.org/10.1145/2742060.2742093

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abstract = "In this paper, a power density analysis is presented for 7nm FinFET technology node based on both shorted-gate (SG) and independentgate (IG) standard cells operating in multiple supply voltage regimes. A Liberty-formatted standard cell library is constructed by selecting the appropriate number of fins for the pull-up and pull-down networks of each logic cell. Next, each cell is characterized by doing SPICE simulations to calculate the propagation delays and output transition times as a function of input transition times and load capacitance values. Finally, the power density of 7nm FinFET technology node is analyzed and compared with the 45 nm CMOS technology node for different circuits. Experimental result shows that the power density of each 7nm FinFET circuit is 3-20 times larger than that of 45nm CMOS circuit under the spacer-defined technology. Experimental result also shows that the back-gate signal enables a better control of power consumption for independentgate FinFETs.",

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N2 - In this paper, a power density analysis is presented for 7nm FinFET technology node based on both shorted-gate (SG) and independentgate (IG) standard cells operating in multiple supply voltage regimes. A Liberty-formatted standard cell library is constructed by selecting the appropriate number of fins for the pull-up and pull-down networks of each logic cell. Next, each cell is characterized by doing SPICE simulations to calculate the propagation delays and output transition times as a function of input transition times and load capacitance values. Finally, the power density of 7nm FinFET technology node is analyzed and compared with the 45 nm CMOS technology node for different circuits. Experimental result shows that the power density of each 7nm FinFET circuit is 3-20 times larger than that of 45nm CMOS circuit under the spacer-defined technology. Experimental result also shows that the back-gate signal enables a better control of power consumption for independentgate FinFETs.

AB - In this paper, a power density analysis is presented for 7nm FinFET technology node based on both shorted-gate (SG) and independentgate (IG) standard cells operating in multiple supply voltage regimes. A Liberty-formatted standard cell library is constructed by selecting the appropriate number of fins for the pull-up and pull-down networks of each logic cell. Next, each cell is characterized by doing SPICE simulations to calculate the propagation delays and output transition times as a function of input transition times and load capacitance values. Finally, the power density of 7nm FinFET technology node is analyzed and compared with the 45 nm CMOS technology node for different circuits. Experimental result shows that the power density of each 7nm FinFET circuit is 3-20 times larger than that of 45nm CMOS circuit under the spacer-defined technology. Experimental result also shows that the back-gate signal enables a better control of power consumption for independentgate FinFETs.

KW - FinFET

KW - Independent gate control

KW - Layout

KW - Power density

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Layout characterization and power density analysis for shorted-gate and independent-Gate 7nm FinFET standard cells

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