Interfacial Study to Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells

Nirmal Adhikari; Ashish Dubey; Devendra Khatiwada; Abu Farzan Mitul; Qi Wang; Swaminathan Venkatesan; Anastasiia Iefanova; Jiantao Zai; Xuefeng Qian; Mukesh Kumar; Qiquan Qiao

doi:10.1021/acsami.5b09797

Interfacial Study to Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells

Nirmal Adhikari, Ashish Dubey, Devendra Khatiwada, Abu Farzan Mitul, Qi Wang, Swaminathan Venkatesan, Anastasiia Iefanova, Jiantao Zai, Xuefeng Qian, Mukesh Kumar, Qiquan Qiao

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

We report effects of an interface between TiO₂-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO₂ and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI₂ phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO₂ electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

Original language	English (US)
Pages (from-to)	26445-26454
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	48
DOIs	https://doi.org/10.1021/acsami.5b09797
State	Published - Dec 9 2015
Externally published	Yes

Keywords

Kelvin probe force microscopy
back recombination
charge transport
interface engineering
perovskite film

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.5b09797

Cite this

@article{5ab189d965ca407aa9d45f35f74d2722,

title = "Interfacial Study to Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells",

abstract = "We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.",

keywords = "Kelvin probe force microscopy, back recombination, charge transport, interface engineering, perovskite film",

author = "Nirmal Adhikari and Ashish Dubey and Devendra Khatiwada and Mitul, {Abu Farzan} and Qi Wang and Swaminathan Venkatesan and Anastasiia Iefanova and Jiantao Zai and Xuefeng Qian and Mukesh Kumar and Qiquan Qiao",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = dec,

day = "9",

doi = "10.1021/acsami.5b09797",

language = "English (US)",

volume = "7",

pages = "26445--26454",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "48",

}

TY - JOUR

T1 - Interfacial Study to Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells

AU - Adhikari, Nirmal

AU - Dubey, Ashish

AU - Khatiwada, Devendra

AU - Mitul, Abu Farzan

AU - Wang, Qi

AU - Venkatesan, Swaminathan

AU - Iefanova, Anastasiia

AU - Zai, Jiantao

AU - Qian, Xuefeng

AU - Kumar, Mukesh

AU - Qiao, Qiquan

PY - 2015/12/9

Y1 - 2015/12/9

N2 - We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

AB - We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

KW - Kelvin probe force microscopy

KW - back recombination

KW - charge transport

KW - interface engineering

KW - perovskite film

UR - http://www.scopus.com/inward/record.url?scp=84949649679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949649679&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b09797

DO - 10.1021/acsami.5b09797

M3 - Article

AN - SCOPUS:84949649679

SN - 1944-8244

VL - 7

SP - 26445

EP - 26454

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 48

ER -

Interfacial Study to Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this