Interfacial optical spectra in amorphous silicon based pin solar cells

Kai Zhu, J. H. Lyou, E. A. Schiff, R. S. Crandall, G. Ganguly, S. S. Hegedus

Research output: Chapter in Book/Entry/PoemConference contribution

2 Scopus citations


We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication.

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)0780357728
StatePublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering


Dive into the research topics of 'Interfacial optical spectra in amorphous silicon based pin solar cells'. Together they form a unique fingerprint.

Cite this