Interfacial optical spectra in amorphous silicon based pin solar cells

Kai Zhu, J. H. Lyou, Eric Allan Schiff, R. S. Crandall, G. Ganguly, S. S. Hegedus

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages725-727
Number of pages3
Volume2000-January
ISBN (Print)0780357728
DOIs
StatePublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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    Zhu, K., Lyou, J. H., Schiff, E. A., Crandall, R. S., Ganguly, G., & Hegedus, S. S. (2000). Interfacial optical spectra in amorphous silicon based pin solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 725-727). [915976] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915976