Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells

Kai Zhu, E. A. Schiff, G. Ganguly

Research output: Contribution to journalArticle

Abstract

We report infrared depletion modulation spectra for near-interface states in a-Si pin solar cells. The effect of additional visible illumination (optical bias) was explored as a means to separate the spectra for n/i and p/i interface states. We found a sharp, optical bias-induced spectral line near 0.8 eV. We attribute this line due to internal optical transitions of dopant-defect complexes in the a-SiC:H:B p-layer of the cells. We discuss the spatial location of the depletion modulation regions, and suggest that this location shifts across the n/i and p/i interfaces for cells with differing deposition and illumination conditions.

Original languageEnglish (US)
Pages (from-to)1162-1166
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume299-302
Issue numberPART 2
DOIs
StatePublished - Apr 1 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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