Infrared charge-modulation spectroscopy of defects in phosphorus doped amorphous silicon

Kai Zhu, E. A. Schiff, G. Ganguly

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17%-5%. At higher doping levels (1%-5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is barely detectable in samples with lower doping levels (below 1%). In these samples a much broader line dominates the spectrum that we attribute to uncomplexed dopants. The relative strength of the two spectral features is in rough agreement with a model proposed by Street that has not been previously tested experimentally.

Original languageEnglish (US)
Pages (from-to)301-308
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume715
DOIs
StatePublished - 2002
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: Apr 2 2002Apr 5 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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