Implantation induced changes in quantum well structures

R. Kalish; L. C. Feldman; D. C. Jacobson; B. E. Weir; J. L. Merz; L. Y. Kramer; K. Doughty; S. Stone; K. K. Lau

doi:10.1016/0168-583X(93)90670-2

Implantation induced changes in quantum well structures

R. Kalish, L. C. Feldman, D. C. Jacobson, B. E. Weir, J. L. Merz, L. Y. Kramer, K. Doughty, S. Stone, K. K. Lau

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 10¹¹ cm^-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.

Original language	English (US)
Pages (from-to)	729-733
Number of pages	5
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	80-81
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(93)90670-2
State	Published - 1993

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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@article{0314a7942e5e4c23b8fbbc09ac98ff5e,

title = "Implantation induced changes in quantum well structures",

abstract = "Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.",

author = "R. Kalish and Feldman, {L. C.} and Jacobson, {D. C.} and Weir, {B. E.} and Merz, {J. L.} and Kramer, {L. Y.} and K. Doughty and S. Stone and Lau, {K. K.}",

note = "Funding Information: We gratefully acknowledge P. Petroff, M. Bode, A. Ourmazd, D. Gershoni, C. Warwick and J.M. Poate for usefuldiscussions.Thisworkwassupported,in part,by the NSF Science and Technology Center for Quantizcd Electronic Structures, Grant DMR 88-10430.",

year = "1993",

doi = "10.1016/0168-583X(93)90670-2",

language = "English (US)",

volume = "80-81",

pages = "729--733",

journal = "Nuclear Inst. and Methods in Physics Research, B",

issn = "0168-583X",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - Implantation induced changes in quantum well structures

AU - Kalish, R.

AU - Feldman, L. C.

AU - Jacobson, D. C.

AU - Weir, B. E.

AU - Merz, J. L.

AU - Kramer, L. Y.

AU - Doughty, K.

AU - Stone, S.

AU - Lau, K. K.

N1 - Funding Information: We gratefully acknowledge P. Petroff, M. Bode, A. Ourmazd, D. Gershoni, C. Warwick and J.M. Poate for usefuldiscussions.Thisworkwassupported,in part,by the NSF Science and Technology Center for Quantizcd Electronic Structures, Grant DMR 88-10430.

PY - 1993

Y1 - 1993

N2 - Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.

AB - Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.

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JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - PART 2

ER -

Implantation induced changes in quantum well structures

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