Implantation induced changes in quantum well structures

R. Kalish, L. C. Feldman, D. C. Jacobson, B. E. Weir, J. L. Merz, L. Y. Kramer, K. Doughty, Sheldon Stone, K. K. Lau

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.

Original languageEnglish (US)
Pages (from-to)729-733
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume80-81
Issue numberPART 2
DOIs
StatePublished - 1993
Externally publishedYes

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Kalish, R., Feldman, L. C., Jacobson, D. C., Weir, B. E., Merz, J. L., Kramer, L. Y., Doughty, K., Stone, S., & Lau, K. K. (1993). Implantation induced changes in quantum well structures. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 80-81(PART 2), 729-733. https://doi.org/10.1016/0168-583X(93)90670-2