Hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon

Sufi Zafar, Eric Allan Schiff

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

We propose a hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon which associates the creation of paramagnetic defects with the transfer of hydrogen between the dilute and clustered phases of bonded hydrogen. Hydrogen in the clustered phase is predominantly paired on sites which we identify as weak Si-Si bonds when unhydrogenated. An elementary statistical-mechanics calculation based on this model accounts for the observed thermally activated paramagnetic defect density and also rationalizes the changes in spin density observed following electron irradiation and hydrogen evolution.

Original languageEnglish (US)
Pages (from-to)5235-5238
Number of pages4
JournalPhysical Review B
Volume40
Issue number7
DOIs
StatePublished - 1989

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Amorphous silicon
metastable state
amorphous silicon
Hydrogen
Defects
defects
hydrogen
Statistical mechanics
Electron irradiation
Defect density
electron irradiation
statistical mechanics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon. / Zafar, Sufi; Schiff, Eric Allan.

In: Physical Review B, Vol. 40, No. 7, 1989, p. 5235-5238.

Research output: Contribution to journalArticle

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