Hydrogen and defects in amorphous silicon

Sufi Zafar; E. A. Schiff

doi:10.1103/PhysRevLett.66.1493

Hydrogen and defects in amorphous silicon

Sufi Zafar, E. A. Schiff

Department of Physics

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54 Scopus citations

Abstract

Experimental evidence for two regimes in the relationship of the defect density to the hydrogenation state of hydrogenated amorphous silicon (a-Si:H) is presented. A prevoius model for the defect density based on the two phases of bound hydrogen in a-Si:H is shown to account for the measured relationship.

Original language	English (US)
Pages (from-to)	1493-1496
Number of pages	4
Journal	Physical Review Letters
Volume	66
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.66.1493
State	Published - 1991

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.66.1493

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title = "Hydrogen and defects in amorphous silicon",

abstract = "Experimental evidence for two regimes in the relationship of the defect density to the hydrogenation state of hydrogenated amorphous silicon (a-Si:H) is presented. A prevoius model for the defect density based on the two phases of bound hydrogen in a-Si:H is shown to account for the measured relationship.",

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year = "1991",

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AU - Zafar, Sufi

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AB - Experimental evidence for two regimes in the relationship of the defect density to the hydrogenation state of hydrogenated amorphous silicon (a-Si:H) is presented. A prevoius model for the defect density based on the two phases of bound hydrogen in a-Si:H is shown to account for the measured relationship.

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DO - 10.1103/PhysRevLett.66.1493

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JO - Physical Review Letters

JF - Physical Review Letters

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Hydrogen and defects in amorphous silicon

Abstract

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