Hydrogen and defects in amorphous silicon

Sufi Zafar, E. A. Schiff

Research output: Contribution to journalArticle

54 Scopus citations

Abstract

Experimental evidence for two regimes in the relationship of the defect density to the hydrogenation state of hydrogenated amorphous silicon (a-Si:H) is presented. A prevoius model for the defect density based on the two phases of bound hydrogen in a-Si:H is shown to account for the measured relationship.

Original languageEnglish (US)
Pages (from-to)1493-1496
Number of pages4
JournalPhysical Review Letters
Volume66
Issue number11
DOIs
StatePublished - Jan 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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