Experimental evidence for two regimes in the relationship of the defect density to the hydrogenation state of hydrogenated amorphous silicon (a-Si:H) is presented. A prevoius model for the defect density based on the two phases of bound hydrogen in a-Si:H is shown to account for the measured relationship.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review Letters|
|State||Published - 1991|
ASJC Scopus subject areas
- Physics and Astronomy(all)