Hopping in exponential bandtails in high electric fields and transport models in amorphous silicon

R. I. Devlen, Homer Antoniadis, Eric Allan Schiff, J. Tauc

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For small electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.

Original languageEnglish (US)
Pages (from-to)341-355
Number of pages15
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume68
Issue number3
DOIs
StatePublished - 1993

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Amorphous silicon
amorphous silicon
Electric fields
electric fields
trapping
Electrons
approximation
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Chemical Engineering(all)

Cite this

@article{2fd19f7866754418bf7ba19cce1729b2,
title = "Hopping in exponential bandtails in high electric fields and transport models in amorphous silicon",
abstract = "A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For small electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.",
author = "Devlen, {R. I.} and Homer Antoniadis and Schiff, {Eric Allan} and J. Tauc",
year = "1993",
doi = "10.1080/13642819308215291",
language = "English (US)",
volume = "68",
pages = "341--355",
journal = "Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties",
issn = "1364-2812",
publisher = "Taylor and Francis Ltd.",
number = "3",

}

TY - JOUR

T1 - Hopping in exponential bandtails in high electric fields and transport models in amorphous silicon

AU - Devlen, R. I.

AU - Antoniadis, Homer

AU - Schiff, Eric Allan

AU - Tauc, J.

PY - 1993

Y1 - 1993

N2 - A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For small electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.

AB - A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For small electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.

UR - http://www.scopus.com/inward/record.url?scp=84926578250&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926578250&partnerID=8YFLogxK

U2 - 10.1080/13642819308215291

DO - 10.1080/13642819308215291

M3 - Article

AN - SCOPUS:84926578250

VL - 68

SP - 341

EP - 355

JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

SN - 1364-2812

IS - 3

ER -