Hopping in exponential bandtails in high electric fields and transport models in amorphous silicon

R. I. Devlen, Homer Antoniadis, E. A. Schiff, J. Tauc

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For small electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.

Original languageEnglish (US)
Pages (from-to)341-355
Number of pages15
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume68
Issue number3
DOIs
StatePublished - Sep 1993

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

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