TY - JOUR
T1 - Hopping in exponential bandtails in high electric fields and transport models in amorphous silicon
AU - Devlen, R. I.
AU - Antoniadis, Homer
AU - Schiff, E. A.
AU - Tauc, J.
PY - 1993/9
Y1 - 1993/9
N2 - A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For small electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.
AB - A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For small electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.
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U2 - 10.1080/13642819308215291
DO - 10.1080/13642819308215291
M3 - Article
AN - SCOPUS:84926578250
SN - 1364-2812
VL - 68
SP - 341
EP - 355
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 3
ER -