Hole-mobility limit of amorphous silicon solar cells

Jianjun Liang, E. A. Schiff, S. Guha, Baojie Yan, J. Yang

Research output: Contribution to journalReview article

41 Scopus citations

Abstract

We present temperature-dependent measurements and modeling for a thickness series of hydrogenated amorphous silicon nip solar cells. The comparison indicates that the maximum power density (PMAX) from the as-deposited cells has achieved the hole-mobility limit established by valence bandtail trapping, and PMAX is thus not significantly limited by intrinsic-layer dangling bonds or by the doped layers and interfaces. Measurements of the temperature-dependent properties of light-soaked cells show that the properties of as-deposited and light-soaked cells converge below 250 K; a model perturbing the valence band tail traps with a density of dangling bonds accounts adequately for the convergence effect.

Original languageEnglish (US)
Article number063512
JournalApplied Physics Letters
Volume88
Issue number6
DOIs
StatePublished - Feb 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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