Hole drift-mobility measurements in microcrystalline silicon

T. Dylla; F. Finger; E. A. Schiff

doi:10.1063/1.1984087

Hole drift-mobility measurements in microcrystalline silicon

T. Dylla, F. Finger, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm2 V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm2 V s.

Original language	English (US)
Article number	032103
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1984087
State	Published - Jul 18 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1984087

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title = "Hole drift-mobility measurements in microcrystalline silicon",

abstract = "We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm2 V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm2 V s.",

author = "T. Dylla and F. Finger and Schiff, {E. A.}",

note = "Funding Information: The authors thank S. Dinca and David Drabold (Ohio University) for several discussions, A. Lambertz, Y. Mai, G. Sch{\"o}pe, and J. Wolff for preparing the diodes, M. H{\"u}lsbeck for the Raman measurements, and M. Krause and E. Bunte for the plasma etching. Research at Syracuse University was supported by the Thin Film Photovoltaics Partnership of the National Renewable Energy Laboratory.",

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doi = "10.1063/1.1984087",

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AU - Finger, F.

AU - Schiff, E. A.

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PY - 2005/7/18

Y1 - 2005/7/18

N2 - We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm2 V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm2 V s.

AB - We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm2 V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm2 V s.

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Hole drift-mobility measurements in microcrystalline silicon

Abstract

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