Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

S. Dinca; G. Ganguly; Z. Lu; E. A. Schiff; V. Vlahos; C. R. Wronski; Q. Yuan

doi:10.1557/proc-762-a7.1

Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

S. Dinca, G. Ganguly, Z. Lu, E. A. Schiff, V. Vlahos, C. R. Wronski, Q. Yuan

Department of Physics

Research output: Contribution to journal › Conference Article › peer-review

14 Scopus citations

Abstract

We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10⁹ cm²/V), hole mobilities reach values as large as 0.01 cm ²/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

Original language	English (US)
Pages (from-to)	345-350
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	762
DOIs	https://doi.org/10.1557/proc-762-a7.1
State	Published - 2003
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon",

abstract = "We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×109 cm2/V), hole mobilities reach values as large as 0.01 cm 2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.",

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T1 - Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

AU - Dinca, S.

AU - Ganguly, G.

AU - Lu, Z.

AU - Schiff, E. A.

AU - Vlahos, V.

AU - Wronski, C. R.

AU - Yuan, Q.

PY - 2003

Y1 - 2003

N2 - We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×109 cm2/V), hole mobilities reach values as large as 0.01 cm 2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

AB - We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×109 cm2/V), hole mobilities reach values as large as 0.01 cm 2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

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ER -

Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

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