Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

S. Dinca, G. Ganguly, Z. Lu, E. A. Schiff, V. Vlahos, C. R. Wronski, Q. Yuan

Research output: Contribution to journalConference Articlepeer-review

13 Scopus citations


We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×109 cm2/V), hole mobilities reach values as large as 0.01 cm 2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

Original languageEnglish (US)
Pages (from-to)345-350
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
EventMaterials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States
Duration: Apr 22 2003Apr 25 2003

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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