Hole drift mobility in a-Si1-xCx:H

Qing Gu, Qi Wang, E. A. Schiff, Yuan Min Li, Charles T. Malone

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a summary of our recent measurements on hole drift mobilities in hydro-genated amorphous silicon-carbon alloys (a-Si1-xC x:H). Increasing the bandgap has a vastly smaller effect for the hole mobility than for electrons. In conjunction with previous drift mobility measurements in a-Si1-xCx:H and a-Si1-xGe x:H, these hole measurements complete a simple pattern for the effects of bandgap modification on drift mobilities: electron mobilities decline as the bandgap is increased beyond 1.72 eV or decreased below 1.72 eV, but hole mobilities are relatively unaffected.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology - 1994
PublisherMaterials Research Society
Pages523-528
Number of pages6
ISBN (Print)1558992367, 9781558992368
DOIs
StatePublished - Jan 1 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Publication series

NameMaterials Research Society Symposium Proceedings
Volume336
ISSN (Print)0272-9172

Other

Other1994 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/4/944/8/94

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Gu, Q., Wang, Q., Schiff, E. A., Li, Y. M., & Malone, C. T. (1994). Hole drift mobility in a-Si1-xCx:H. In Amorphous Silicon Technology - 1994 (pp. 523-528). (Materials Research Society Symposium Proceedings; Vol. 336). Materials Research Society. https://doi.org/10.1557/proc-336-523