Hole drift mobility in a-Si1-xCx:H

Qing Gu, Qi Wang, E. A. Schiff, Yuan Min Li, Charles T. Malone

Research output: Chapter in Book/Entry/PoemConference contribution

1 Scopus citations


We present a summary of our recent measurements on hole drift mobilities in hydro-genated amorphous silicon-carbon alloys (a-Si1-xC x:H). Increasing the bandgap has a vastly smaller effect for the hole mobility than for electrons. In conjunction with previous drift mobility measurements in a-Si1-xCx:H and a-Si1-xGe x:H, these hole measurements complete a simple pattern for the effects of bandgap modification on drift mobilities: electron mobilities decline as the bandgap is increased beyond 1.72 eV or decreased below 1.72 eV, but hole mobilities are relatively unaffected.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology - 1994
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558992367, 9781558992368
StatePublished - 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other1994 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Hole drift mobility in a-Si1-xCx:H'. Together they form a unique fingerprint.

Cite this