@inproceedings{6e9561c0bedc4472bdbb799d56853ade,
title = "Hole drift mobility in a-Si1-xCx:H",
abstract = "We present a summary of our recent measurements on hole drift mobilities in hydro-genated amorphous silicon-carbon alloys (a-Si1-xC x:H). Increasing the bandgap has a vastly smaller effect for the hole mobility than for electrons. In conjunction with previous drift mobility measurements in a-Si1-xCx:H and a-Si1-xGe x:H, these hole measurements complete a simple pattern for the effects of bandgap modification on drift mobilities: electron mobilities decline as the bandgap is increased beyond 1.72 eV or decreased below 1.72 eV, but hole mobilities are relatively unaffected.",
author = "Qing Gu and Qi Wang and Schiff, {E. A.} and Li, {Yuan Min} and Malone, {Charles T.}",
year = "1994",
doi = "10.1557/proc-336-523",
language = "English (US)",
isbn = "1558992367",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "523--528",
booktitle = "Amorphous Silicon Technology - 1994",
note = "1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",
}