High-field electron drift in a-Si:H

Homer Antoniadis, R. I. Devlen, Sergei Esipov, S. Guha, E. A. Schiff, J. Tauc

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E0 of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.

Original languageEnglish (US)
Pages (from-to)407-410
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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    Antoniadis, H., Devlen, R. I., Esipov, S., Guha, S., Schiff, E. A., & Tauc, J. (1991). High-field electron drift in a-Si:H. Journal of Non-Crystalline Solids, 137-138(PART 1), 407-410. https://doi.org/10.1016/S0022-3093(05)80141-3