Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E0 of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry