High-field electron drift in a-Si:H

Homer Antoniadis; R. I. Devlen; Sergei Esipov; S. Guha; E. A. Schiff; J. Tauc

doi:10.1016/S0022-3093(05)80141-3

High-field electron drift in a-Si:H

Homer Antoniadis, R. I. Devlen, Sergei Esipov, S. Guha, E. A. Schiff, J. Tauc

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E₀ of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.

Original language	English (US)
Pages (from-to)	407-410
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	137-138
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0022-3093(05)80141-3
State	Published - 1991

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(05)80141-3

Cite this

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title = "High-field electron drift in a-Si:H",

abstract = "Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E0 of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.",

author = "Homer Antoniadis and Devlen, {R. I.} and Sergei Esipov and S. Guha and Schiff, {E. A.} and J. Tauc",

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AU - Antoniadis, Homer

AU - Devlen, R. I.

AU - Esipov, Sergei

AU - Guha, S.

AU - Schiff, E. A.

AU - Tauc, J.

PY - 1991

Y1 - 1991

N2 - Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E0 of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.

AB - Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E0 of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.

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U2 - 10.1016/S0022-3093(05)80141-3

DO - 10.1016/S0022-3093(05)80141-3

M3 - Article

AN - SCOPUS:0026415479

SN - 0022-3093

VL - 137-138

SP - 407

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

High-field electron drift in a-Si:H

Abstract

ASJC Scopus subject areas

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