High field electron drift in a-Si:H

Qing Gu, Eric A. Schiff, Jean Baptiste Chevrier, Bernard Equer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


We have measured the electron drift mobility in a-Si:H at high electric fields (E≤3.6×105 V/cm). The a-Si:H pin structure was prepared at Palaiseau, and incorporated a thick p+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns-1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility depended exponentially upon field (exp(E/E0), where E0 = 1.1×105 V/cm). The same field dependence was observed in the time range 10 ns-1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology
EditorsEric A. Schiff, Malcolm J. Thompson, Arun Madan, Kazunobu Tanaka, Peter G. LeComber
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)155899193X
StatePublished - Dec 1 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1993Apr 16 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Gu, Q., Schiff, E. A., Chevrier, J. B., & Equer, B. (1993). High field electron drift in a-Si:H. In E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, & P. G. LeComber (Eds.), Amorphous Silicon Technology (pp. 425-430). (Materials Research Society Symposium Proceedings; Vol. 297). Publ by Materials Research Society.