High field electron drift in a-Si:H

Qing Gu, Eric A. Schiff, Jean Baptiste Chevrier, Bernard Equer

Research output: Chapter in Book/Entry/PoemConference contribution

1 Scopus citations


We have measured the electron drift mobility in a-Si:H at high electric fields (E≤3.6×105 V/cm). The a-Si:H pin structure was prepared at Palaiseau, and incorporated a thick p+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns-1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility depended exponentially upon field (exp(E/E0), where E0 = 1.1×105 V/cm). The same field dependence was observed in the time range 10 ns-1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)155899193X, 9781558991934
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1993Apr 16 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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