High field electron drift in a-Si: H

Qing Gu, Eric Allan Schiff, Jean Baptiste Chevrier, Bernard Equer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have measured the electron drift mobility in a-Si:H at high electric fields (E≤3.6×10 5 V/cm). The a-Si:H pin structure was prepared at Palaiseau, and incorporated a thick p + layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns-1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility depended exponentially upon field (exp(E/E 0), where E 0 = 1.1×10 5 V/cm). The same field dependence was observed in the time range 10 ns-1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsEric A. Schiff, Malcolm J. Thompson, Arun Madan, Kazunobu Tanaka, Peter G. LeComber
PublisherPubl by Materials Research Society
Pages425-430
Number of pages6
Volume297
ISBN (Print)155899193X
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1993Apr 16 1993

Other

OtherProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/13/934/16/93

Fingerprint

Photocurrents
Laser pulses
Electric fields
Electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Gu, Q., Schiff, E. A., Chevrier, J. B., & Equer, B. (1993). High field electron drift in a-Si: H. In E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, & P. G. LeComber (Eds.), Materials Research Society Symposium Proceedings (Vol. 297, pp. 425-430). Publ by Materials Research Society.

High field electron drift in a-Si : H. / Gu, Qing; Schiff, Eric Allan; Chevrier, Jean Baptiste; Equer, Bernard.

Materials Research Society Symposium Proceedings. ed. / Eric A. Schiff; Malcolm J. Thompson; Arun Madan; Kazunobu Tanaka; Peter G. LeComber. Vol. 297 Publ by Materials Research Society, 1993. p. 425-430.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gu, Q, Schiff, EA, Chevrier, JB & Equer, B 1993, High field electron drift in a-Si: H. in EA Schiff, MJ Thompson, A Madan, K Tanaka & PG LeComber (eds), Materials Research Society Symposium Proceedings. vol. 297, Publ by Materials Research Society, pp. 425-430, Proceedings of the MRS Spring Meeting, San Francisco, CA, USA, 4/13/93.
Gu Q, Schiff EA, Chevrier JB, Equer B. High field electron drift in a-Si: H. In Schiff EA, Thompson MJ, Madan A, Tanaka K, LeComber PG, editors, Materials Research Society Symposium Proceedings. Vol. 297. Publ by Materials Research Society. 1993. p. 425-430
Gu, Qing ; Schiff, Eric Allan ; Chevrier, Jean Baptiste ; Equer, Bernard. / High field electron drift in a-Si : H. Materials Research Society Symposium Proceedings. editor / Eric A. Schiff ; Malcolm J. Thompson ; Arun Madan ; Kazunobu Tanaka ; Peter G. LeComber. Vol. 297 Publ by Materials Research Society, 1993. pp. 425-430
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