Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays

Pranav Soman; Max Darnell; Marc D. Feldman; Shaochen Chen

doi:10.1166/jnn.2011.4210

Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays

Pranav Soman, Max Darnell, Marc D. Feldman, Shaochen Chen

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

Original language	English (US)
Pages (from-to)	6880-6885
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	8
DOIs	https://doi.org/10.1166/jnn.2011.4210
State	Published - Aug 2011
Externally published	Yes

Keywords

E-beam lithography
High-Aspect ratio
Horizontally-aligned
Nanowire
PDMS
Patterning
Zinc oxide

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

Access to Document

10.1166/jnn.2011.4210

Cite this

@article{fc6a021750cc45f0b12377a46f979ea7,

title = "Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays",

abstract = "A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.",

keywords = "E-beam lithography, High-Aspect ratio, Horizontally-aligned, Nanowire, PDMS, Patterning, Zinc oxide",

author = "Pranav Soman and Max Darnell and Feldman, {Marc D.} and Shaochen Chen",

year = "2011",

month = aug,

doi = "10.1166/jnn.2011.4210",

language = "English (US)",

volume = "11",

pages = "6880--6885",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "8",

}

TY - JOUR

T1 - Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays

AU - Soman, Pranav

AU - Darnell, Max

AU - Feldman, Marc D.

AU - Chen, Shaochen

PY - 2011/8

Y1 - 2011/8

N2 - A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

AB - A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

KW - E-beam lithography

KW - High-Aspect ratio

KW - Horizontally-aligned

KW - Nanowire

KW - PDMS

KW - Patterning

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84863011274&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863011274&partnerID=8YFLogxK

U2 - 10.1166/jnn.2011.4210

DO - 10.1166/jnn.2011.4210

M3 - Article

C2 - 22103094

AN - SCOPUS:84863011274

SN - 1533-4880

VL - 11

SP - 6880

EP - 6885

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 8

ER -

Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this