Grain Boundary Defect Passivation in Quadruple Cation Wide-Bandgap Perovskite Solar Cells

Khan Mamun Reza; Ashim Gurung; Behzad Bahrami; Ashraful Haider Chowdhury; Nabin Ghimire; Rajesh Pathak; Sheikh Ifatur Rahman; Md Ashiqur Rahman Laskar; Ke Chen; Raja Sekhar Bobba; Buddhi Sagar Lamsal; Liton Kumar Biswas; Yue Zhou; Brian Logue; Quinn Qiao

doi:10.1002/solr.202000740

Grain Boundary Defect Passivation in Quadruple Cation Wide-Bandgap Perovskite Solar Cells

Khan Mamun Reza, Ashim Gurung, Behzad Bahrami, Ashraful Haider Chowdhury, Nabin Ghimire, Rajesh Pathak, Sheikh Ifatur Rahman, Md Ashiqur Rahman Laskar, Ke Chen, Raja Sekhar Bobba, Buddhi Sagar Lamsal, Liton Kumar Biswas, Yue Zhou, Brian Logue, Quinn Qiao

Department of Mechanical & Aerospace Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Development of high-performance wide-bandgap perovskites is a key component to enable tandem solar cells with either a silicon or low-bandgap perovskites. However, the presence of defects in the Br-rich wide-bandgap perovskites, especially in the grain boundaries (GBs) has been particularly challenging and limits its performance. Herein, to accomplish the passivation of these defects, a combination of cation management with rubidium (Rb) introduction into the triple cation combination of cesium/formamidinium/methylammonium (CsFAMA) is exercised. Passivation is further enhanced by secondary growth (SG) using guanidinium iodide. In-depth assessments of GB defect passivation are performed using Kelvin probe force microscopy (KPFM) and nanoscale charge-carrier dynamics mappings provide insightful details on the presence of GBs defects and their suppression by the cation management and SG techniques. Reduction of unreacted PbX₂ to realize a highly crystalline perovskite surface is achieved after incorporating Rb and SG treatment. As a result, a champion cell for 1.78 eV (FA_0.79MA_0.16Cs_0.05)_0.95Rb_0.05Pb(I_0.6Br_0.4)₃ wide-bandgap perovskite with an efficiency of 17.71% along with enhancement in all photovoltaic parameters is achieved. This study introduces a new way to analyze GB defects and reveals the consequence of defect passivation on charge-carrier dynamics for realizing efficient perovskites.

Original language	English (US)
Article number	2000740
Journal	Solar RRL
Volume	5
Issue number	4
DOIs	https://doi.org/10.1002/solr.202000740
State	Published - Apr 2021

Keywords

defect passivation
quadruple cations
secondary growth
wide-bandgap perovskites

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1002/solr.202000740

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Reza, K. M., Gurung, A., Bahrami, B., Chowdhury, A. H., Ghimire, N., Pathak, R., Rahman, S. I., Laskar, M. A. R., Chen, K., Bobba, R. S., Lamsal, B. S., Biswas, L. K., Zhou, Y., Logue, B., & Qiao, Q. (2021). Grain Boundary Defect Passivation in Quadruple Cation Wide-Bandgap Perovskite Solar Cells. Solar RRL, 5(4), Article 2000740. https://doi.org/10.1002/solr.202000740

@article{747df78ce29c4f6cb162e996a7d071cc,

title = "Grain Boundary Defect Passivation in Quadruple Cation Wide-Bandgap Perovskite Solar Cells",

abstract = "Development of high-performance wide-bandgap perovskites is a key component to enable tandem solar cells with either a silicon or low-bandgap perovskites. However, the presence of defects in the Br-rich wide-bandgap perovskites, especially in the grain boundaries (GBs) has been particularly challenging and limits its performance. Herein, to accomplish the passivation of these defects, a combination of cation management with rubidium (Rb) introduction into the triple cation combination of cesium/formamidinium/methylammonium (CsFAMA) is exercised. Passivation is further enhanced by secondary growth (SG) using guanidinium iodide. In-depth assessments of GB defect passivation are performed using Kelvin probe force microscopy (KPFM) and nanoscale charge-carrier dynamics mappings provide insightful details on the presence of GBs defects and their suppression by the cation management and SG techniques. Reduction of unreacted PbX2 to realize a highly crystalline perovskite surface is achieved after incorporating Rb and SG treatment. As a result, a champion cell for 1.78 eV (FA0.79MA0.16Cs0.05)0.95Rb0.05Pb(I0.6Br0.4)3 wide-bandgap perovskite with an efficiency of 17.71% along with enhancement in all photovoltaic parameters is achieved. This study introduces a new way to analyze GB defects and reveals the consequence of defect passivation on charge-carrier dynamics for realizing efficient perovskites.",

keywords = "defect passivation, quadruple cations, secondary growth, wide-bandgap perovskites",

author = "Reza, {Khan Mamun} and Ashim Gurung and Behzad Bahrami and Chowdhury, {Ashraful Haider} and Nabin Ghimire and Rajesh Pathak and Rahman, {Sheikh Ifatur} and Laskar, {Md Ashiqur Rahman} and Ke Chen and Bobba, {Raja Sekhar} and Lamsal, {Buddhi Sagar} and Biswas, {Liton Kumar} and Yue Zhou and Brian Logue and Quinn Qiao",

note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = apr,

doi = "10.1002/solr.202000740",

language = "English (US)",

volume = "5",

journal = "Solar RRL",

issn = "2367-198X",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Grain Boundary Defect Passivation in Quadruple Cation Wide-Bandgap Perovskite Solar Cells

AU - Reza, Khan Mamun

AU - Gurung, Ashim

AU - Bahrami, Behzad

AU - Chowdhury, Ashraful Haider

AU - Ghimire, Nabin

AU - Pathak, Rajesh

AU - Rahman, Sheikh Ifatur

AU - Laskar, Md Ashiqur Rahman

AU - Chen, Ke

AU - Bobba, Raja Sekhar

AU - Lamsal, Buddhi Sagar

AU - Biswas, Liton Kumar

AU - Zhou, Yue

AU - Logue, Brian

AU - Qiao, Quinn

PY - 2021/4

Y1 - 2021/4

N2 - Development of high-performance wide-bandgap perovskites is a key component to enable tandem solar cells with either a silicon or low-bandgap perovskites. However, the presence of defects in the Br-rich wide-bandgap perovskites, especially in the grain boundaries (GBs) has been particularly challenging and limits its performance. Herein, to accomplish the passivation of these defects, a combination of cation management with rubidium (Rb) introduction into the triple cation combination of cesium/formamidinium/methylammonium (CsFAMA) is exercised. Passivation is further enhanced by secondary growth (SG) using guanidinium iodide. In-depth assessments of GB defect passivation are performed using Kelvin probe force microscopy (KPFM) and nanoscale charge-carrier dynamics mappings provide insightful details on the presence of GBs defects and their suppression by the cation management and SG techniques. Reduction of unreacted PbX2 to realize a highly crystalline perovskite surface is achieved after incorporating Rb and SG treatment. As a result, a champion cell for 1.78 eV (FA0.79MA0.16Cs0.05)0.95Rb0.05Pb(I0.6Br0.4)3 wide-bandgap perovskite with an efficiency of 17.71% along with enhancement in all photovoltaic parameters is achieved. This study introduces a new way to analyze GB defects and reveals the consequence of defect passivation on charge-carrier dynamics for realizing efficient perovskites.

AB - Development of high-performance wide-bandgap perovskites is a key component to enable tandem solar cells with either a silicon or low-bandgap perovskites. However, the presence of defects in the Br-rich wide-bandgap perovskites, especially in the grain boundaries (GBs) has been particularly challenging and limits its performance. Herein, to accomplish the passivation of these defects, a combination of cation management with rubidium (Rb) introduction into the triple cation combination of cesium/formamidinium/methylammonium (CsFAMA) is exercised. Passivation is further enhanced by secondary growth (SG) using guanidinium iodide. In-depth assessments of GB defect passivation are performed using Kelvin probe force microscopy (KPFM) and nanoscale charge-carrier dynamics mappings provide insightful details on the presence of GBs defects and their suppression by the cation management and SG techniques. Reduction of unreacted PbX2 to realize a highly crystalline perovskite surface is achieved after incorporating Rb and SG treatment. As a result, a champion cell for 1.78 eV (FA0.79MA0.16Cs0.05)0.95Rb0.05Pb(I0.6Br0.4)3 wide-bandgap perovskite with an efficiency of 17.71% along with enhancement in all photovoltaic parameters is achieved. This study introduces a new way to analyze GB defects and reveals the consequence of defect passivation on charge-carrier dynamics for realizing efficient perovskites.

KW - defect passivation

KW - quadruple cations

KW - secondary growth

KW - wide-bandgap perovskites

UR - http://www.scopus.com/inward/record.url?scp=85101372483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85101372483&partnerID=8YFLogxK

U2 - 10.1002/solr.202000740

DO - 10.1002/solr.202000740

M3 - Article

AN - SCOPUS:85101372483

SN - 2367-198X

VL - 5

JO - Solar RRL

JF - Solar RRL

IS - 4

M1 - 2000740

ER -

Grain Boundary Defect Passivation in Quadruple Cation Wide-Bandgap Perovskite Solar Cells

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Keywords

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