Characteristics of low-frequency noise generators in ionimplanted GaAs MESFET's on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and l/f2 types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of elections into deep level defects and their subsequent thermal emission to the conduction band.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering