Gate Current Dependence of Low-Frequency Noise in GaAs MESFET's

M. D. Das; P. K. Ghosh

doi:10.1109/EDL.1981.25405

Gate Current Dependence of Low-Frequency Noise in GaAs MESFET's

M. D. Das, P. K. Ghosh

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Characteristics of low-frequency noise generators in ionimplanted GaAs MESFET's on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and l/f² types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of elections into deep level defects and their subsequent thermal emission to the conduction band.

Original language	English (US)
Pages (from-to)	210-213
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	2
Issue number	8
DOIs	https://doi.org/10.1109/EDL.1981.25405
State	Published - Aug 1981
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1981.25405

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abstract = "Characteristics of low-frequency noise generators in ionimplanted GaAs MESFET's on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and l/f2 types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of elections into deep level defects and their subsequent thermal emission to the conduction band.",

author = "Das, {M. D.} and Ghosh, {P. K.}",

year = "1981",

month = aug,

doi = "10.1109/EDL.1981.25405",

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AU - Ghosh, P. K.

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N2 - Characteristics of low-frequency noise generators in ionimplanted GaAs MESFET's on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and l/f2 types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of elections into deep level defects and their subsequent thermal emission to the conduction band.

AB - Characteristics of low-frequency noise generators in ionimplanted GaAs MESFET's on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and l/f2 types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of elections into deep level defects and their subsequent thermal emission to the conduction band.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Gate Current Dependence of Low-Frequency Noise in GaAs MESFET's

Abstract

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