Gate Current Dependence of Low-Frequency Noise in GaAs MESFET's

M. D. Das, P. K. Ghosh

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Characteristics of low-frequency noise generators in ionimplanted GaAs MESFET's on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and l/f2 types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of elections into deep level defects and their subsequent thermal emission to the conduction band.

Original languageEnglish (US)
Pages (from-to)210-213
Number of pages4
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 1981
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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