Galvanic deposition of nanocrystalline ZnO thin films from a ZnO-Zn(OH)2 mixed phase precursor on p-Si substrate

N. Mukherjee, P. Bhattacharyya, M. Banerjee, A. Mondal, Robert T.T. Gettens, P. K. Ghosh, H. Saha

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

A galvanic technique for the deposition of ZnO thin films is reported. The depositions were carried out on p-type single-crystal silicon substrates at room temperature, from a solution of ZnSO4, where the Zn rod acted as a sacrificing anode and p-Si was the cathode. The deposition of ZnO by this method is pH sensitive, and a pH between 4 and 5 is found to be optimum for film deposition. This deposition technique is simple, inexpensive and can be carried out at room temperature. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies revealed the nanocrystalline structure of the films. The resistivity of the annealed ZnO films was determined by the Van der Pauw measurement technique.

Original languageEnglish (US)
Pages (from-to)2665-2669
Number of pages5
JournalNanotechnology
Volume17
Issue number10
DOIs
StatePublished - May 28 2006

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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