Abstract
Models for high field effects observed in electron drift mobility measurements on hydrogenated amorphous silicon (a-Si:H) are discussed. In particular we describe the two high-field generalizations of the bandtail multiple-trapping model (effective temperatures, and an electric field dependent emission prefactor), and we discuss the origin of these phenomenological models in hopping and mobility-edge models for transport.
Original language | English (US) |
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Pages (from-to) | 194-197 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 198-200 |
Issue number | PART 1 |
DOIs | |
State | Published - May 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry