Models for high field effects observed in electron drift mobility measurements on hydrogenated amorphous silicon (a-Si:H) are discussed. In particular we describe the two high-field generalizations of the bandtail multiple-trapping model (effective temperatures, and an electric field dependent emission prefactor), and we discuss the origin of these phenomenological models in hopping and mobility-edge models for transport.
ASJC Scopus subject areas
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials