Fundamental transport mechanisms and high field mobility measurements in amorphous silicon

Qing Gu, E. A. Schiff, J. B. Chevrier, B. Equer

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Models for high field effects observed in electron drift mobility measurements on hydrogenated amorphous silicon (a-Si:H) are discussed. In particular we describe the two high-field generalizations of the bandtail multiple-trapping model (effective temperatures, and an electric field dependent emission prefactor), and we discuss the origin of these phenomenological models in hopping and mobility-edge models for transport.

Original languageEnglish (US)
Pages (from-to)194-197
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume198-200
Issue numberPART 1
DOIs
StatePublished - May 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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