Impatt diodes are useful as high peak-power microwave sources for short duration applications such as in missile-borne systems. However, they exhibit high-catastrophic failures indicated by either peripheral (mess surface) burnouts or by intense filamentary shortouts within the bulk of the semiconductor. Such failures are normally attributed to electrical overstressings (EOS) arising from rf-associated transients or perturbations due to changes in bias voltage, rf-impedance loading and/or due to external stimuli such as electrostatic discharge (ESD), electromagnetic pulsing (EMP), ETC. These electrical overstressings influence the temporal and spatial thermal response of the device leading to catastrophic failures. In order to obtain optimum utility yield of IMPATTs, failure-prediction and trade-off studies required for design-reviews are considered by identifying the mechanisms of failures along with relevant heat-flow calculations (Wunsch-Bell approach) compatible with the diode geometry and electrothermal power relations. For a given extent of failure propensity due to thermal runaway reliability aspects of some typical diode structures are evaluated.
|Number of pages
|Electrical Overstress/Electrostatic Discharge Symposium Proceedings
|Published - 1985
ASJC Scopus subject areas
- Condensed Matter Physics