FILAMENTARY HOT-SPOTS IN MICROWAVE IMPATT DIODES: MODIFIED WUNSCH-BELL MODEL.

Perambur S. Neelakantaswamy, Ibrahim R. Turkman, Tapan Kumar Sarkar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Impatt diodes are useful as high peak-power microwave sources for short duration applications such as in missile-borne systems. However, they exhibit high-catastrophic failures indicated by either peripheral (mess surface) burnouts or by intense filamentary shortouts within the bulk of the semiconductor. Such failures are normally attributed to electrical overstressings (EOS) arising from rf-associated transients or perturbations due to changes in bias voltage, rf-impedance loading and/or due to external stimuli such as electrostatic discharge (ESD), electromagnetic pulsing (EMP), ETC. These electrical overstressings influence the temporal and spatial thermal response of the device leading to catastrophic failures. In order to obtain optimum utility yield of IMPATTs, failure-prediction and trade-off studies required for design-reviews are considered by identifying the mechanisms of failures along with relevant heat-flow calculations (Wunsch-Bell approach) compatible with the diode geometry and electrothermal power relations. For a given extent of failure propensity due to thermal runaway reliability aspects of some typical diode structures are evaluated.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings
PublisherElectrical Overstress/Electrostatic Discharge Assoc
Pages92-99
Number of pages8
StatePublished - 1985
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Neelakantaswamy, P. S., Turkman, I. R., & Sarkar, T. K. (1985). FILAMENTARY HOT-SPOTS IN MICROWAVE IMPATT DIODES: MODIFIED WUNSCH-BELL MODEL. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings (pp. 92-99). Electrical Overstress/Electrostatic Discharge Assoc.