The causative factors and mechanism(s) of latent failures in microelectronic devices induced by electrical overstressing are subtle in nature. However, considering the age-dependent performance degradation that occurs at low thresholds of external electrical stressings (such as electrostatic discharge, electromagnetic pulsing, etc. ) which may lead a device into out-of-spec conditions, the failure induction can be attributed to the cumulative buildup of residual strains within the device resulting from thermoelastic stresses caused by repetitive zaps. The corresponding thermal shock and fatigue can initiate microflaws in the device structure, and therefore the latent mode of device failure can be regarded as the endochronic response of the stress-relief in the device structure which can be analyzed by electromagnetics-based electrothermal/thermoelastic considerations as detailed in the present investigations.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Dec 1 1985|
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