FAILURES IN MICROELECTRONIC DEVICES DUE TO THERMOELASTIC STRAINS CAUSED BY ELECTRICAL OVERSTRESSINGS.

P. S. Neelakantaswamy, I. R. Turkman, Tapan Kumar Sarkar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The causative factors and mechanism(s) of latent failures in microelectronic devices induced by electrical overstressing are subtle in nature. However, considering the age-dependent performance degradation that occurs at low thresholds of external electrical stressings (such as electrostatic discharge, electromagnetic pulsing, etc. ) which may lead a device into out-of-spec conditions, the failure induction can be attributed to the cumulative buildup of residual strains within the device resulting from thermoelastic stresses caused by repetitive zaps. The corresponding thermal shock and fatigue can initiate microflaws in the device structure, and therefore the latent mode of device failure can be regarded as the endochronic response of the stress-relief in the device structure which can be analyzed by electromagnetics-based electrothermal/thermoelastic considerations as detailed in the present investigations.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsP.M. Niskode, P.E. Doepker
PublisherASME
Pages1-5
Number of pages5
StatePublished - 1985
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Neelakantaswamy, P. S., Turkman, I. R., & Sarkar, T. K. (1985). FAILURES IN MICROELECTRONIC DEVICES DUE TO THERMOELASTIC STRAINS CAUSED BY ELECTRICAL OVERSTRESSINGS. In P. M. Niskode, & P. E. Doepker (Eds.), Unknown Host Publication Title (pp. 1-5). ASME.