Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching

Rebecca Bussjager, Joseph Osman, Joseph Chaiken

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This effort reviews the Nonlinear Interface Optical Switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO 3) and tungsten (V) oxide (W 2O 5) on the hypotenuse of glass (BK-7), fused silica (SiO 2) and zinc selenide (ZnSe) right angle prisms. The extent to which the chemical state of the film can also be manipulated electrically, in a purely gas-solid context, is discussed. Temporal response, spatial density of packing the switches and clarifying considerations regarding choices of materials are also presented.

Original languageEnglish (US)
Title of host publicationIEEE Aerospace Applications Conference Proceedings
Editors Anon
PublisherIEEE Computer Society
Pages271-281
Number of pages11
Volume5
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Aerospace Conference. Part 1 (of 5) - Snowmass at Aspen, CO, USA
Duration: Mar 21 1998Mar 28 1998

Other

OtherProceedings of the 1998 IEEE Aerospace Conference. Part 1 (of 5)
CitySnowmass at Aspen, CO, USA
Period3/21/983/28/98

Fingerprint

Optical data storage
Optical switches
Tungsten
Optical data processing
Oxides
Fused silica
Prisms
Photonics
Zinc
Switches
Fabrication
Glass
Thin films
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bussjager, R., Osman, J., & Chaiken, J. (1998). Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching. In Anon (Ed.), IEEE Aerospace Applications Conference Proceedings (Vol. 5, pp. 271-281). IEEE Computer Society.

Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching. / Bussjager, Rebecca; Osman, Joseph; Chaiken, Joseph.

IEEE Aerospace Applications Conference Proceedings. ed. / Anon. Vol. 5 IEEE Computer Society, 1998. p. 271-281.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bussjager, R, Osman, J & Chaiken, J 1998, Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching. in Anon (ed.), IEEE Aerospace Applications Conference Proceedings. vol. 5, IEEE Computer Society, pp. 271-281, Proceedings of the 1998 IEEE Aerospace Conference. Part 1 (of 5), Snowmass at Aspen, CO, USA, 3/21/98.
Bussjager R, Osman J, Chaiken J. Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching. In Anon, editor, IEEE Aerospace Applications Conference Proceedings. Vol. 5. IEEE Computer Society. 1998. p. 271-281
Bussjager, Rebecca ; Osman, Joseph ; Chaiken, Joseph. / Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching. IEEE Aerospace Applications Conference Proceedings. editor / Anon. Vol. 5 IEEE Computer Society, 1998. pp. 271-281
@inproceedings{c2ba3eef9f8f46be8935ffae4a603fe7,
title = "Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching",
abstract = "There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This effort reviews the Nonlinear Interface Optical Switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO 3) and tungsten (V) oxide (W 2O 5) on the hypotenuse of glass (BK-7), fused silica (SiO 2) and zinc selenide (ZnSe) right angle prisms. The extent to which the chemical state of the film can also be manipulated electrically, in a purely gas-solid context, is discussed. Temporal response, spatial density of packing the switches and clarifying considerations regarding choices of materials are also presented.",
author = "Rebecca Bussjager and Joseph Osman and Joseph Chaiken",
year = "1998",
language = "English (US)",
volume = "5",
pages = "271--281",
editor = "Anon",
booktitle = "IEEE Aerospace Applications Conference Proceedings",
publisher = "IEEE Computer Society",
address = "United States",

}

TY - GEN

T1 - Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching

AU - Bussjager, Rebecca

AU - Osman, Joseph

AU - Chaiken, Joseph

PY - 1998

Y1 - 1998

N2 - There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This effort reviews the Nonlinear Interface Optical Switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO 3) and tungsten (V) oxide (W 2O 5) on the hypotenuse of glass (BK-7), fused silica (SiO 2) and zinc selenide (ZnSe) right angle prisms. The extent to which the chemical state of the film can also be manipulated electrically, in a purely gas-solid context, is discussed. Temporal response, spatial density of packing the switches and clarifying considerations regarding choices of materials are also presented.

AB - There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This effort reviews the Nonlinear Interface Optical Switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO 3) and tungsten (V) oxide (W 2O 5) on the hypotenuse of glass (BK-7), fused silica (SiO 2) and zinc selenide (ZnSe) right angle prisms. The extent to which the chemical state of the film can also be manipulated electrically, in a purely gas-solid context, is discussed. Temporal response, spatial density of packing the switches and clarifying considerations regarding choices of materials are also presented.

UR - http://www.scopus.com/inward/record.url?scp=0031621839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031621839&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031621839

VL - 5

SP - 271

EP - 281

BT - IEEE Aerospace Applications Conference Proceedings

A2 - Anon, null

PB - IEEE Computer Society

ER -