Epitaxial growth with phosphorus 4. Application of dichloro-t-butylphosphine to CVD processes: The thermal chemical vapor deposition formation of copper phosphide thin films and etching of indium phosphide by dichloro-t-butylphosphine [1]

John A. Glass; James T. Spencer

doi:10.1016/S0040-6090(97)00915-2

Epitaxial growth with phosphorus 4. Application of dichloro-t-butylphosphine to CVD processes: The thermal chemical vapor deposition formation of copper phosphide thin films and etching of indium phosphide by dichloro-t-butylphosphine [1]

John A. Glass, James T. Spencer

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The potential application of dichloro-t-butylphosphine (DCTBP) as a phosphorus source compound for InP growth is explored. Experiments employing DCTBP with trimethylindium were, however, unsuccessful in preparing InP thin films but rather resulted in the efficient etching of the InP substrate. An InP etching rate of 73.4 Å/s was observed with an InP substrate temperature of approximately 600°C. A possible mechanism is presented to account for these observations. In addition, crystalline copper phosphide (Cu₃P) thin films were formed from the thermal surface reaction of copper metal and DCTBP. The films are characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques.

Original language	English (US)
Pages (from-to)	138-142
Number of pages	5
Journal	Thin Solid Films
Volume	322
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(97)00915-2
State	Published - Jun 8 1998

Keywords

Dichloro-t-butylphosphine
Indium phosphide
Trimethylindium

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Epitaxial growth with phosphorus 4. Application of dichloro-t-butylphosphine to CVD processes: The thermal chemical vapor deposition formation of copper phosphide thin films and etching of indium phosphide by dichloro-t-butylphosphine [1]. / Glass, John A.; Spencer, James T.
In: Thin Solid Films, Vol. 322, No. 1-2, 08.06.1998, p. 138-142.

Research output: Contribution to journal › Article › peer-review

@article{69771304f7f540ce8ff4438ece72e238,

title = "Epitaxial growth with phosphorus 4. Application of dichloro-t-butylphosphine to CVD processes: The thermal chemical vapor deposition formation of copper phosphide thin films and etching of indium phosphide by dichloro-t-butylphosphine [1]",

abstract = "The potential application of dichloro-t-butylphosphine (DCTBP) as a phosphorus source compound for InP growth is explored. Experiments employing DCTBP with trimethylindium were, however, unsuccessful in preparing InP thin films but rather resulted in the efficient etching of the InP substrate. An InP etching rate of 73.4 {\AA}/s was observed with an InP substrate temperature of approximately 600°C. A possible mechanism is presented to account for these observations. In addition, crystalline copper phosphide (Cu3P) thin films were formed from the thermal surface reaction of copper metal and DCTBP. The films are characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques.",

keywords = "Dichloro-t-butylphosphine, Indium phosphide, Trimethylindium",

author = "Glass, {John A.} and Spencer, {James T.}",

note = "Funding Information: We wish to thank the National Science Foundation (Grant No. MSS-89-09793), the National Science Foundation Research Experiences for Undergraduates Site Award (Grant No. CHE-8900471), the Donors of the Petroleum Research Fund as administered by the American Chemical Society, the Wright–Patterson Laboratory (Award No. F33615-90-C-5291) and the Industrial Affiliates Program of the Center for Molecular Electronics for support of this work.",

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AU - Glass, John A.

AU - Spencer, James T.

N1 - Funding Information: We wish to thank the National Science Foundation (Grant No. MSS-89-09793), the National Science Foundation Research Experiences for Undergraduates Site Award (Grant No. CHE-8900471), the Donors of the Petroleum Research Fund as administered by the American Chemical Society, the Wright–Patterson Laboratory (Award No. F33615-90-C-5291) and the Industrial Affiliates Program of the Center for Molecular Electronics for support of this work.

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N2 - The potential application of dichloro-t-butylphosphine (DCTBP) as a phosphorus source compound for InP growth is explored. Experiments employing DCTBP with trimethylindium were, however, unsuccessful in preparing InP thin films but rather resulted in the efficient etching of the InP substrate. An InP etching rate of 73.4 Å/s was observed with an InP substrate temperature of approximately 600°C. A possible mechanism is presented to account for these observations. In addition, crystalline copper phosphide (Cu3P) thin films were formed from the thermal surface reaction of copper metal and DCTBP. The films are characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques.

AB - The potential application of dichloro-t-butylphosphine (DCTBP) as a phosphorus source compound for InP growth is explored. Experiments employing DCTBP with trimethylindium were, however, unsuccessful in preparing InP thin films but rather resulted in the efficient etching of the InP substrate. An InP etching rate of 73.4 Å/s was observed with an InP substrate temperature of approximately 600°C. A possible mechanism is presented to account for these observations. In addition, crystalline copper phosphide (Cu3P) thin films were formed from the thermal surface reaction of copper metal and DCTBP. The films are characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques.

KW - Dichloro-t-butylphosphine

KW - Indium phosphide

KW - Trimethylindium

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Epitaxial growth with phosphorus 4. Application of dichloro-t-butylphosphine to CVD processes: The thermal chemical vapor deposition formation of copper phosphide thin films and etching of indium phosphide by dichloro-t-butylphosphine [1]

Abstract

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