Epitaxial growth with phosphorus 3. Formation of indium phosphide thin films using cyclohexylphosphine, (C₆H₁₁)PH₂, as the organophosphorus source compound

Engineering & Materials Science

• Indium phosphide 100%
• Epitaxial growth 85%
• Phosphorus 73%
• Thin films 57%
• Auger electron spectroscopy 37%
• X ray films 20%
• Substrates 17%
• X-Ray Emission Spectrometry 15%
• Chemical vapor deposition 14%
• Diffraction 13%
• Crystalline materials 12%
• Temperature 9%
• Scanning electron microscopy 9%
• Silicon 9%
• Flow rate 9%
• Chemical analysis 7%

Chemical Compounds

• Indium Phosphide 94%
• Epitaxial Growth 73%
• Phosphorus(.) 50%
• Auger Electron Spectroscopy 27%
• Organophosphorus Compound 15%
• Energy Dispersive X-Ray Spectroscopy 11%
• Polycrystalline Solid 10%
• Flow Kinetics 9%
• X-Ray 7%

Physics & Astronomy

• indium phosphides 78%
• phosphorus 59%
• thin films 31%
• Auger spectroscopy 24%
• electron spectroscopy 23%
• x rays 10%
• flow velocity 9%
• vapor deposition 9%
• scanning electron microscopy 7%
• temperature 7%
• silicon 6%
• diffraction 6%
• spectroscopy 6%
• energy 3%