Electron deep-trapping mobility-lifetime (μτ) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting μτ estimate upon the collection time was observed. The correlation of μτ with independent electron spin resonance spectroscopy determinations of the D0 defect density Ns was studied. The data are roughly distributed as μτ ∝ Ns-1 for specimens prepared from pure silane at varying deposition temperatures. The correlation supports the proposal of Street that the predominant deep trap for electrons is the D0 defect.
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