Electron time-of-flight measurements in porous silicon

Prasanna Rao, E. A. Schiff, L. Tsybeskov, P. M. Fauchet

Research output: Contribution to journalConference article

14 Scopus citations

Abstract

Transient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α ≈ 0.5. The range of mobilities is 10-5 - 10-4 cm2/Vs between 225 K and 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

Original languageEnglish (US)
Pages (from-to)613-618
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume452
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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