Electron time-of-flight measurements in a-Si1-xCx:H

Qi Wang, Eric A. Schiff, Yuan Min Li

Research output: Chapter in Book/Entry/PoemConference contribution

5 Scopus citations


We have measured the temperature-dependent electron drift mobility in a series of hydrogenated amorphous silicon-carbon alloys using time-of-flight. The specimens were prepared at Solarex using the gas mixture procedures which have recently yielded improvement in the solar conversion efficiency of wide bandgap solar cells. As the bandgap increased due to carbon alloying the electron drift mobility decreased by as much as a factor 30 at some temperatures. The cells with 1.75 eV, 1.81 eV, and 1.87 eV bandgaps had thermally activated drift mobilities over the temperature range 120 K - 200 K; this is associated with simple multiple-trapping behavior. Specimens with bandgaps near 1.90 eV did not have simply activated drift mobilities; we have not accounted for this behavior, but it suggests that the bandtail broadening description used to account for the effects of germanium alloying on the electron drift mobility may not be simply applicable to carbon alloying.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)155899193X, 9781558991934
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1993Apr 16 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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