Electron time-of-flight measurements in a-Si1-xCx: H

Qi Wang, Eric Allan Schiff, Yuan Min Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We have measured the temperature-dependent electron drift mobility in a series of hydrogenated amorphous silicon-carbon alloys using time-of-flight. The specimens were prepared at Solarex using the gas mixture procedures which have recently yielded improvement in the solar conversion efficiency of wide bandgap solar cells. As the bandgap increased due to carbon alloying the electron drift mobility decreased by as much as a factor 30 at some temperatures. The cells with 1.75 eV, 1.81 eV, and 1.87 eV bandgaps had thermally activated drift mobilities over the temperature range 120 K - 200 K; this is associated with simple multiple-trapping behavior. Specimens with bandgaps near 1.90 eV did not have simply activated drift mobilities; we have not accounted for this behavior, but it suggests that the bandtail broadening description used to account for the effects of germanium alloying on the electron drift mobility may not be simply applicable to carbon alloying.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsEric A. Schiff, Malcolm J. Thompson, Arun Madan, Kazunobu Tanaka, Peter G. LeComber
PublisherPubl by Materials Research Society
Pages419-424
Number of pages6
Volume297
ISBN (Print)155899193X
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1993Apr 16 1993

Other

OtherProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/13/934/16/93

Fingerprint

Energy gap
Alloying
Carbon
Electrons
Germanium
Amorphous silicon
Gas mixtures
Temperature
Conversion efficiency
Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Wang, Q., Schiff, E. A., & Li, Y. M. (1993). Electron time-of-flight measurements in a-Si1-xCx: H. In E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, & P. G. LeComber (Eds.), Materials Research Society Symposium Proceedings (Vol. 297, pp. 419-424). Publ by Materials Research Society.

Electron time-of-flight measurements in a-Si1-xCx : H. / Wang, Qi; Schiff, Eric Allan; Li, Yuan Min.

Materials Research Society Symposium Proceedings. ed. / Eric A. Schiff; Malcolm J. Thompson; Arun Madan; Kazunobu Tanaka; Peter G. LeComber. Vol. 297 Publ by Materials Research Society, 1993. p. 419-424.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, Q, Schiff, EA & Li, YM 1993, Electron time-of-flight measurements in a-Si1-xCx: H. in EA Schiff, MJ Thompson, A Madan, K Tanaka & PG LeComber (eds), Materials Research Society Symposium Proceedings. vol. 297, Publ by Materials Research Society, pp. 419-424, Proceedings of the MRS Spring Meeting, San Francisco, CA, USA, 4/13/93.
Wang Q, Schiff EA, Li YM. Electron time-of-flight measurements in a-Si1-xCx: H. In Schiff EA, Thompson MJ, Madan A, Tanaka K, LeComber PG, editors, Materials Research Society Symposium Proceedings. Vol. 297. Publ by Materials Research Society. 1993. p. 419-424
Wang, Qi ; Schiff, Eric Allan ; Li, Yuan Min. / Electron time-of-flight measurements in a-Si1-xCx : H. Materials Research Society Symposium Proceedings. editor / Eric A. Schiff ; Malcolm J. Thompson ; Arun Madan ; Kazunobu Tanaka ; Peter G. LeComber. Vol. 297 Publ by Materials Research Society, 1993. pp. 419-424
@inproceedings{a525b0d11d12484eac50319a98e2df30,
title = "Electron time-of-flight measurements in a-Si1-xCx: H",
abstract = "We have measured the temperature-dependent electron drift mobility in a series of hydrogenated amorphous silicon-carbon alloys using time-of-flight. The specimens were prepared at Solarex using the gas mixture procedures which have recently yielded improvement in the solar conversion efficiency of wide bandgap solar cells. As the bandgap increased due to carbon alloying the electron drift mobility decreased by as much as a factor 30 at some temperatures. The cells with 1.75 eV, 1.81 eV, and 1.87 eV bandgaps had thermally activated drift mobilities over the temperature range 120 K - 200 K; this is associated with simple multiple-trapping behavior. Specimens with bandgaps near 1.90 eV did not have simply activated drift mobilities; we have not accounted for this behavior, but it suggests that the bandtail broadening description used to account for the effects of germanium alloying on the electron drift mobility may not be simply applicable to carbon alloying.",
author = "Qi Wang and Schiff, {Eric Allan} and Li, {Yuan Min}",
year = "1993",
language = "English (US)",
isbn = "155899193X",
volume = "297",
pages = "419--424",
editor = "Schiff, {Eric A.} and Thompson, {Malcolm J.} and Arun Madan and Kazunobu Tanaka and LeComber, {Peter G.}",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - Electron time-of-flight measurements in a-Si1-xCx

T2 - H

AU - Wang, Qi

AU - Schiff, Eric Allan

AU - Li, Yuan Min

PY - 1993

Y1 - 1993

N2 - We have measured the temperature-dependent electron drift mobility in a series of hydrogenated amorphous silicon-carbon alloys using time-of-flight. The specimens were prepared at Solarex using the gas mixture procedures which have recently yielded improvement in the solar conversion efficiency of wide bandgap solar cells. As the bandgap increased due to carbon alloying the electron drift mobility decreased by as much as a factor 30 at some temperatures. The cells with 1.75 eV, 1.81 eV, and 1.87 eV bandgaps had thermally activated drift mobilities over the temperature range 120 K - 200 K; this is associated with simple multiple-trapping behavior. Specimens with bandgaps near 1.90 eV did not have simply activated drift mobilities; we have not accounted for this behavior, but it suggests that the bandtail broadening description used to account for the effects of germanium alloying on the electron drift mobility may not be simply applicable to carbon alloying.

AB - We have measured the temperature-dependent electron drift mobility in a series of hydrogenated amorphous silicon-carbon alloys using time-of-flight. The specimens were prepared at Solarex using the gas mixture procedures which have recently yielded improvement in the solar conversion efficiency of wide bandgap solar cells. As the bandgap increased due to carbon alloying the electron drift mobility decreased by as much as a factor 30 at some temperatures. The cells with 1.75 eV, 1.81 eV, and 1.87 eV bandgaps had thermally activated drift mobilities over the temperature range 120 K - 200 K; this is associated with simple multiple-trapping behavior. Specimens with bandgaps near 1.90 eV did not have simply activated drift mobilities; we have not accounted for this behavior, but it suggests that the bandtail broadening description used to account for the effects of germanium alloying on the electron drift mobility may not be simply applicable to carbon alloying.

UR - http://www.scopus.com/inward/record.url?scp=0027795259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027795259&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027795259

SN - 155899193X

VL - 297

SP - 419

EP - 424

BT - Materials Research Society Symposium Proceedings

A2 - Schiff, Eric A.

A2 - Thompson, Malcolm J.

A2 - Madan, Arun

A2 - Tanaka, Kazunobu

A2 - LeComber, Peter G.

PB - Publ by Materials Research Society

ER -