Electron mobility-lifetime product and D° defect density in hydrogenated amorphous silicon

S. P. Hotaling, Homer Antoniadis, Eric Allan Schiff

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The electron deep-trapping mobility lifetime product μτt and spin defect (D°) density Ns in hydrogenated amorphous silicon (a-Si:H) were studied using transient photocharge and electron spin resonance measurements. Three series of specimens were prepared in two different reactor geometries, with and without argon dilution of silane, and for varying substrate temperatures. For several specimens the effects of light soaking were also measured. For two of the series μτt was roughly inversely proportional to the spin density, in agreement with the model that electrons are deep-trapped by D° defects; these series yielded μτtNs ≈ 109cm-1V-1. For a third series of specimens a more rapid decline of μτt with Ns was observed.

Original languageEnglish (US)
Pages (from-to)420-422
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989

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Defect density
Electron mobility
Amorphous silicon
electron mobility
amorphous silicon
Silanes
life (durability)
Defects
Electrons
Argon
defects
products
Dilution
Paramagnetic resonance
soaking
silanes
dilution
Geometry
electron paramagnetic resonance
electrons

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Electron mobility-lifetime product and D° defect density in hydrogenated amorphous silicon. / Hotaling, S. P.; Antoniadis, Homer; Schiff, Eric Allan.

In: Journal of Non-Crystalline Solids, Vol. 114, No. PART 2, 02.12.1989, p. 420-422.

Research output: Contribution to journalArticle

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