TY - JOUR
T1 - Electron mobility-lifetime product and D° defect density in hydrogenated amorphous silicon
AU - Hotaling, S. P.
AU - Antoniadis, Homer
AU - Schiff, E. A.
N1 - Funding Information:
*This research has been supported by the Solar Energy Research Institute (XB-6-06005-2).
PY - 1989/12/2
Y1 - 1989/12/2
N2 - The electron deep-trapping mobility lifetime product μτt and spin defect (D°) density Ns in hydrogenated amorphous silicon (a-Si:H) were studied using transient photocharge and electron spin resonance measurements. Three series of specimens were prepared in two different reactor geometries, with and without argon dilution of silane, and for varying substrate temperatures. For several specimens the effects of light soaking were also measured. For two of the series μτt was roughly inversely proportional to the spin density, in agreement with the model that electrons are deep-trapped by D° defects; these series yielded μτtNs ≈ 109cm-1V-1. For a third series of specimens a more rapid decline of μτt with Ns was observed.
AB - The electron deep-trapping mobility lifetime product μτt and spin defect (D°) density Ns in hydrogenated amorphous silicon (a-Si:H) were studied using transient photocharge and electron spin resonance measurements. Three series of specimens were prepared in two different reactor geometries, with and without argon dilution of silane, and for varying substrate temperatures. For several specimens the effects of light soaking were also measured. For two of the series μτt was roughly inversely proportional to the spin density, in agreement with the model that electrons are deep-trapped by D° defects; these series yielded μτtNs ≈ 109cm-1V-1. For a third series of specimens a more rapid decline of μτt with Ns was observed.
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U2 - 10.1016/0022-3093(89)90604-2
DO - 10.1016/0022-3093(89)90604-2
M3 - Article
AN - SCOPUS:0024794812
SN - 0022-3093
VL - 114
SP - 420
EP - 422
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 2
ER -