Electron-hole-phonon coupling in semiconductor quantum wells

W. Cai, T. F. Zheng, M. C. Marchetti, M. Lax

Research output: Contribution to journalArticle

Abstract

We study the transport of the photoexcited quasi-2D electron-hole (e-h) plasma in a p-doped semiconductor quantum well, where electrons are a minority. Using the drifted temperature model for both electrons and holes and introducing a coordinate transformation to the center-of-mass system, separately, for electrons and holes, we obtain a set of coupled equations for the drift velocities and the temperatures of electrons and holes. We show that negative absolute mobility for minority electrons occurs at low temperature and under a weak electric field due to the electron-hole drag. In a strong electric field and at room bath temperature, our results show that the electrons are heated much more than the holes. The electron mobility is smaller in the presence of the hole plasma than in the absence of holes. These results are in agreement with experiments.

Original languageEnglish (US)
Pages (from-to)269-276
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume942
DOIs
StatePublished - Aug 22 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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