Electron drift mobility measurements on annealed and light-soaked hydrogenated amorphous silicon

Qi Wang, Homer Antoniadis, E. A. Schiff

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We measured the effects of light soaking on the electron drift mobility for three specimens of hydrogenated amorphous silicon (a-Si:H) from different laboratories. The temperature range 130-300 K was studied. The measurements in all cases reveal two temporal regimes: an early time regime associated with bandtail transport, and a later-time regime associated with deep trapping of the electrons. We found no evidence for effects of light soaking on the bandtail regime within a reproducibility error of 20%. Deep trapping was significantly affected by light soaking, in agreement with extensive prior measurements.

Original languageEnglish (US)
Pages (from-to)2791-2793
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number22
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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