Abstract
We measured the effects of light soaking on the electron drift mobility for three specimens of hydrogenated amorphous silicon (a-Si:H) from different laboratories. The temperature range 130-300 K was studied. The measurements in all cases reveal two temporal regimes: an early time regime associated with bandtail transport, and a later-time regime associated with deep trapping of the electrons. We found no evidence for effects of light soaking on the bandtail regime within a reproducibility error of 20%. Deep trapping was significantly affected by light soaking, in agreement with extensive prior measurements.
Original language | English (US) |
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Pages (from-to) | 2791-2793 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 22 |
DOIs | |
State | Published - 1992 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)