We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)