Electron drift-mobility measurements in polycrystalline CuIn 1-xGa xSe 2 solar cells

S. A. Dinca; E. A. Schiff; W. N. Shafarman; B. Egaas; R. Noufi; D. L. Young

doi:10.1063/1.3692165

Electron drift-mobility measurements in polycrystalline CuIn _1-xGa _xSe ₂ solar cells

S. A. Dinca, E. A. Schiff, W. N. Shafarman, B. Egaas, R. Noufi, D. L. Young

Department of Physics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn _1-xGa _xSe ₂ films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm ²/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm ²/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Original language	English (US)
Article number	103901
Journal	Applied Physics Letters
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.3692165
State	Published - Mar 5 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3692165

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title = "Electron drift-mobility measurements in polycrystalline CuIn 1-xGa xSe 2 solar cells",

abstract = "We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.",

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AU - Dinca, S. A.

AU - Schiff, E. A.

AU - Shafarman, W. N.

AU - Egaas, B.

AU - Noufi, R.

AU - Young, D. L.

PY - 2012/3/5

Y1 - 2012/3/5

N2 - We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

AB - We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

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Electron drift-mobility measurements in polycrystalline CuIn _1-xGa _xSe ₂ solar cells

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