Electron drift-mobility measurements in polycrystalline CuIn 1-xGa xSe 2 solar cells

S. A. Dinca, E. A. Schiff, W. N. Shafarman, B. Egaas, R. Noufi, D. L. Young

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Original languageEnglish (US)
Article number103901
JournalApplied Physics Letters
Issue number10
StatePublished - Mar 5 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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