Electron and hole drift mobility measurements on thin film CdTe solar cells

Qi Long, Steluta A. Dinca, Eric Allan Schiff, Ming Yu, Jeremy Theil

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Abstract

We report electron and hole drift mobilities in thin film polycrystalline CdTe solar cells based on photocarrier time-of-flight measurements. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range of 10-1-100 cm 2/V s, and holes are in the range of 100-101 cm2/V s. The electron drift mobilities are about a thousand times smaller than those measured in single crystal CdTe with time-of-flight; the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl2; treatment had little effect on the hole drift mobility, but decreased the electron mobility. We are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe, but the actual mechanism reducing the mobilities from the single crystal values is not known.

Original languageEnglish (US)
Article number042106
JournalApplied Physics Letters
Volume105
Issue number4
DOIs
StatePublished - Jul 28 2014

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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